NTF2955T1G
vs
NVF2955PT1G
feature comparison
Pbfree Code |
Yes
|
|
Part Life Cycle Code |
Active
|
Obsolete
|
Ihs Manufacturer |
ONSEMI
|
ON SEMICONDUCTOR
|
Part Package Code |
SOT-223 (TO-261) 4 LEAD
|
|
Package Description |
TO-261, 4 PIN
|
SMALL OUTLINE, R-PDSO-G4
|
Pin Count |
4
|
|
Manufacturer Package Code |
0.0318
|
|
Reach Compliance Code |
not_compliant
|
not_compliant
|
ECCN Code |
EAR99
|
EAR99
|
Factory Lead Time |
67 Weeks
|
|
Samacsys Manufacturer |
onsemi
|
|
Avalanche Energy Rating (Eas) |
225 mJ
|
225 mJ
|
Case Connection |
DRAIN
|
DRAIN
|
Configuration |
SINGLE WITH BUILT-IN DIODE
|
SINGLE WITH BUILT-IN DIODE
|
DS Breakdown Voltage-Min |
60 V
|
60 V
|
Drain Current-Max (ID) |
1.7 A
|
1.7 A
|
Drain-source On Resistance-Max |
0.185 Ω
|
0.185 Ω
|
FET Technology |
METAL-OXIDE SEMICONDUCTOR
|
METAL-OXIDE SEMICONDUCTOR
|
JEDEC-95 Code |
TO-261AA
|
TO-261AA
|
JESD-30 Code |
R-PDSO-G4
|
R-PDSO-G4
|
JESD-609 Code |
e3
|
e3
|
Moisture Sensitivity Level |
1
|
1
|
Number of Elements |
1
|
1
|
Number of Terminals |
4
|
4
|
Operating Mode |
ENHANCEMENT MODE
|
ENHANCEMENT MODE
|
Operating Temperature-Max |
175 °C
|
|
Package Body Material |
PLASTIC/EPOXY
|
PLASTIC/EPOXY
|
Package Shape |
RECTANGULAR
|
RECTANGULAR
|
Package Style |
SMALL OUTLINE
|
SMALL OUTLINE
|
Peak Reflow Temperature (Cel) |
260
|
260
|
Polarity/Channel Type |
P-CHANNEL
|
P-CHANNEL
|
Power Dissipation-Max (Abs) |
1.92 W
|
|
Pulsed Drain Current-Max (IDM) |
10.4 A
|
17 A
|
Qualification Status |
Not Qualified
|
|
Surface Mount |
YES
|
YES
|
Terminal Finish |
Matte Tin (Sn) - annealed
|
Tin (Sn)
|
Terminal Form |
GULL WING
|
GULL WING
|
Terminal Position |
DUAL
|
DUAL
|
Time@Peak Reflow Temperature-Max (s) |
30
|
30
|
Transistor Application |
SWITCHING
|
SWITCHING
|
Transistor Element Material |
SILICON
|
SILICON
|
Base Number Matches |
1
|
1
|
Rohs Code |
|
Yes
|
Reference Standard |
|
AEC-Q101
|
|
|
|
Compare NTF2955T1G with alternatives
Compare NVF2955PT1G with alternatives