NTF2955T1G vs NVF2955PT1G feature comparison

NTF2955T1G onsemi

Buy Now Datasheet

NVF2955PT1G onsemi

Buy Now Datasheet
Pbfree Code Yes
Part Life Cycle Code Active Obsolete
Ihs Manufacturer ONSEMI ON SEMICONDUCTOR
Part Package Code SOT-223 (TO-261) 4 LEAD
Package Description TO-261, 4 PIN SMALL OUTLINE, R-PDSO-G4
Pin Count 4
Manufacturer Package Code 0.0318
Reach Compliance Code not_compliant not_compliant
ECCN Code EAR99 EAR99
Factory Lead Time 67 Weeks
Samacsys Manufacturer onsemi
Avalanche Energy Rating (Eas) 225 mJ 225 mJ
Case Connection DRAIN DRAIN
Configuration SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 60 V 60 V
Drain Current-Max (ID) 1.7 A 1.7 A
Drain-source On Resistance-Max 0.185 Ω 0.185 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-261AA TO-261AA
JESD-30 Code R-PDSO-G4 R-PDSO-G4
JESD-609 Code e3 e3
Moisture Sensitivity Level 1 1
Number of Elements 1 1
Number of Terminals 4 4
Operating Mode ENHANCEMENT MODE ENHANCEMENT MODE
Operating Temperature-Max 175 °C
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style SMALL OUTLINE SMALL OUTLINE
Peak Reflow Temperature (Cel) 260 260
Polarity/Channel Type P-CHANNEL P-CHANNEL
Power Dissipation-Max (Abs) 1.92 W
Pulsed Drain Current-Max (IDM) 10.4 A 17 A
Qualification Status Not Qualified
Surface Mount YES YES
Terminal Finish Matte Tin (Sn) - annealed Tin (Sn)
Terminal Form GULL WING GULL WING
Terminal Position DUAL DUAL
Time@Peak Reflow Temperature-Max (s) 30 30
Transistor Application SWITCHING SWITCHING
Transistor Element Material SILICON SILICON
Base Number Matches 1 1
Rohs Code Yes
Reference Standard AEC-Q101

Compare NTF2955T1G with alternatives

Compare NVF2955PT1G with alternatives