NTHD3101FT1G
vs
NTHD3101FT1G
feature comparison
| Pbfree Code |
Yes
|
Yes
|
| Rohs Code |
Yes
|
|
| Part Life Cycle Code |
Active
|
End Of Life
|
| Ihs Manufacturer |
ROCHESTER ELECTRONICS LLC
|
ONSEMI
|
| Package Description |
LEAD FREE, LEADLESS, CASE 1206A-03, CHIPFET-8
|
CHIPFET-8
|
| Pin Count |
8
|
8
|
| Manufacturer Package Code |
CASE 1206A-03
|
1206A-03
|
| Reach Compliance Code |
unknown
|
compliant
|
| Configuration |
SINGLE WITH BUILT-IN DIODE
|
SINGLE WITH BUILT-IN DIODE
|
| DS Breakdown Voltage-Min |
20 V
|
20 V
|
| Drain Current-Max (ID) |
3.2 A
|
3.2 A
|
| Drain-source On Resistance-Max |
0.08 Ω
|
0.08 Ω
|
| FET Technology |
METAL-OXIDE SEMICONDUCTOR
|
METAL-OXIDE SEMICONDUCTOR
|
| JESD-30 Code |
R-XDSO-C8
|
R-XDSO-C8
|
| JESD-609 Code |
e3
|
e3
|
| Moisture Sensitivity Level |
NOT SPECIFIED
|
1
|
| Number of Elements |
1
|
1
|
| Number of Terminals |
8
|
8
|
| Operating Mode |
ENHANCEMENT MODE
|
ENHANCEMENT MODE
|
| Package Body Material |
UNSPECIFIED
|
UNSPECIFIED
|
| Package Shape |
RECTANGULAR
|
RECTANGULAR
|
| Package Style |
SMALL OUTLINE
|
SMALL OUTLINE
|
| Peak Reflow Temperature (Cel) |
260
|
260
|
| Polarity/Channel Type |
P-CHANNEL
|
P-CHANNEL
|
| Pulsed Drain Current-Max (IDM) |
13 A
|
13 A
|
| Qualification Status |
COMMERCIAL
|
Not Qualified
|
| Surface Mount |
YES
|
YES
|
| Terminal Finish |
MATTE TIN
|
MATTE TIN
|
| Terminal Form |
C BEND
|
C BEND
|
| Terminal Position |
DUAL
|
DUAL
|
| Time@Peak Reflow Temperature-Max (s) |
40
|
30
|
| Transistor Application |
SWITCHING
|
SWITCHING
|
| Transistor Element Material |
SILICON
|
SILICON
|
| Base Number Matches |
1
|
1
|
| Part Package Code |
|
ChipFET
|
| ECCN Code |
|
EAR99
|
| Factory Lead Time |
|
2 Days
|
| Samacsys Manufacturer |
|
onsemi
|
| Operating Temperature-Max |
|
150 °C
|
| Power Dissipation-Max (Abs) |
|
1.1 W
|
|
|
|
Compare NTHD3101FT1G with alternatives
Compare NTHD3101FT1G with alternatives