NTHL080N120SC1 vs C2M0080120D feature comparison

NTHL080N120SC1 onsemi

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C2M0080120D

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Source Content uid NTHL080N120SC1
Pbfree Code Yes
Part Life Cycle Code End Of Life
Ihs Manufacturer ON SEMICONDUCTOR
Package Description FLANGE MOUNT, R-PSFM-T3
Manufacturer Package Code 340CX
Reach Compliance Code not_compliant
ECCN Code EAR99
Date Of Intro 2018-12-21
Avalanche Energy Rating (Eas) 171 mJ
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 1200 V
Drain Current-Max (Abs) (ID) 31 A
Drain Current-Max (ID) 31 A
Drain-source On Resistance-Max 0.11 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
Feedback Cap-Max (Crss) 6.5 pF
JEDEC-95 Code TO-247
JESD-30 Code R-PSFM-T3
JESD-609 Code e3
Number of Elements 1
Number of Terminals 3
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 175 °C
Operating Temperature-Min -55 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style FLANGE MOUNT
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 178 W
Pulsed Drain Current-Max (IDM) 132 A
Surface Mount NO
Terminal Finish Matte Tin (Sn) - annealed
Terminal Form THROUGH-HOLE
Terminal Position SINGLE
Transistor Application SWITCHING
Transistor Element Material SILICON CARBIDE
Base Number Matches 1

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