NTMD4N03R2 vs HUF76113DK8T feature comparison

NTMD4N03R2 Rochester Electronics LLC

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HUF76113DK8T Harris Semiconductor

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Pbfree Code Yes
Rohs Code No
Part Life Cycle Code Active Obsolete
Ihs Manufacturer ROCHESTER ELECTRONICS LLC HARRIS SEMICONDUCTOR
Part Package Code SOT
Package Description MINIATURE, CASE 751-07, SOIC-8 SMALL OUTLINE, R-PDSO-G8
Pin Count 8
Manufacturer Package Code CASE 751-07
Reach Compliance Code unknown unknown
Avalanche Energy Rating (Eas) 80 mJ
Configuration SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 30 V 30 V
Drain Current-Max (ID) 4 A 6 A
Drain-source On Resistance-Max 0.06 Ω 0.041 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
JESD-30 Code R-PDSO-G8 R-PDSO-G8
JESD-609 Code e0
Moisture Sensitivity Level 1
Number of Elements 2 2
Number of Terminals 8 8
Operating Mode ENHANCEMENT MODE ENHANCEMENT MODE
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style SMALL OUTLINE SMALL OUTLINE
Peak Reflow Temperature (Cel) 240
Polarity/Channel Type N-CHANNEL N-CHANNEL
Pulsed Drain Current-Max (IDM) 12 A
Qualification Status COMMERCIAL Not Qualified
Surface Mount YES YES
Terminal Finish TIN LEAD
Terminal Form GULL WING GULL WING
Terminal Position DUAL DUAL
Time@Peak Reflow Temperature-Max (s) 30
Transistor Application SWITCHING SWITCHING
Transistor Element Material SILICON SILICON
Base Number Matches 2 4
ECCN Code EAR99
Additional Feature LOGIC LEVEL COMPATIBLE
JEDEC-95 Code MS-012AA

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