NTMFS4985NFT1G vs BSZ0904NSIATMA1 feature comparison

NTMFS4985NFT1G onsemi

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BSZ0904NSIATMA1 Infineon Technologies AG

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Pbfree Code Yes No
Part Life Cycle Code End Of Life Active
Ihs Manufacturer ONSEMI INFINEON TECHNOLOGIES AG
Part Package Code DFN5 5X6, 1.27P (SO 8FL)
Pin Count 5 8
Manufacturer Package Code 488AA
Reach Compliance Code not_compliant not_compliant
ECCN Code EAR99 EAR99
Factory Lead Time 4 Weeks 16 Weeks, 4 Days
Samacsys Manufacturer onsemi Infineon
Avalanche Energy Rating (Eas) 54 mJ 20 mJ
Case Connection DRAIN DRAIN
Configuration SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 30 V 30 V
Drain Current-Max (ID) 17.5 A 18 A
Drain-source On Resistance-Max 0.005 Ω 0.0057 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
Feedback Cap-Max (Crss) 60 pF
JESD-30 Code R-PDSO-F5 R-PDSO-N8
JESD-609 Code e3 e3
Moisture Sensitivity Level 1 1
Number of Elements 1 1
Number of Terminals 5 8
Operating Mode ENHANCEMENT MODE ENHANCEMENT MODE
Operating Temperature-Max 150 °C 150 °C
Operating Temperature-Min -55 °C
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style SMALL OUTLINE SMALL OUTLINE
Peak Reflow Temperature (Cel) 260 NOT SPECIFIED
Polarity/Channel Type N-CHANNEL N-CHANNEL
Power Dissipation-Max (Abs) 22.73 W 37 W
Pulsed Drain Current-Max (IDM) 195 A 160 A
Surface Mount YES YES
Terminal Finish Matte Tin (Sn) - annealed Tin (Sn)
Terminal Form FLAT NO LEAD
Terminal Position DUAL DUAL
Time@Peak Reflow Temperature-Max (s) 30 NOT SPECIFIED
Transistor Application SWITCHING SWITCHING
Transistor Element Material SILICON SILICON
Base Number Matches 1 1
Rohs Code Yes
Package Description SMALL OUTLINE, R-PDSO-N3

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Compare BSZ0904NSIATMA1 with alternatives