NTP15N40 vs IPD90N06S306ATMA1 feature comparison

NTP15N40 onsemi

Buy Now Datasheet

IPD90N06S306ATMA1 Infineon Technologies AG

Buy Now Datasheet
Rohs Code No
Part Life Cycle Code Obsolete Active
Ihs Manufacturer ON SEMICONDUCTOR INFINEON TECHNOLOGIES AG
Part Package Code TO-220AB
Package Description FLANGE MOUNT, R-PSFM-T3 GREEN, TO-252, 3 PIN
Pin Count 3
Manufacturer Package Code CASE 221A-09
Reach Compliance Code not_compliant compliant
ECCN Code EAR99 EAR99
Additional Feature AVALANCHE RATED, ULTRA-LOW RESISTANCE ULTRA LOW RESISTANCE
Avalanche Energy Rating (Eas) 675 mJ 250 mJ
Case Connection DRAIN DRAIN
Configuration SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 400 V 55 V
Drain Current-Max (ID) 15 A 90 A
Drain-source On Resistance-Max 0.26 Ω 0.006 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-220AB TO-252AA
JESD-30 Code R-PSFM-T3 R-PSSO-G2
JESD-609 Code e0
Number of Elements 1 1
Number of Terminals 3 2
Operating Mode ENHANCEMENT MODE ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style FLANGE MOUNT SMALL OUTLINE
Polarity/Channel Type N-CHANNEL N-CHANNEL
Power Dissipation-Max (Abs) 202 W
Pulsed Drain Current-Max (IDM) 53 A 360 A
Qualification Status Not Qualified
Surface Mount NO YES
Terminal Finish TIN LEAD
Terminal Form THROUGH-HOLE GULL WING
Terminal Position SINGLE SINGLE
Transistor Application SWITCHING
Transistor Element Material SILICON SILICON
Base Number Matches 1 1

Compare NTP15N40 with alternatives

Compare IPD90N06S306ATMA1 with alternatives