NVHL080N120SC1
vs
CMF20120D
feature comparison
Pbfree Code |
Yes
|
Yes
|
Part Life Cycle Code |
Not Recommended
|
Obsolete
|
Ihs Manufacturer |
ONSEMI
|
WOLFSPEED INC
|
Manufacturer Package Code |
340CX
|
|
Reach Compliance Code |
not_compliant
|
compliant
|
ECCN Code |
EAR99
|
EAR99
|
Factory Lead Time |
4 Weeks
|
|
Date Of Intro |
2018-12-03
|
|
Samacsys Manufacturer |
onsemi
|
Wolfspeed
|
Avalanche Energy Rating (Eas) |
171 mJ
|
2200 mJ
|
Case Connection |
DRAIN
|
|
Configuration |
SINGLE WITH BUILT-IN DIODE
|
SINGLE WITH BUILT-IN DIODE
|
DS Breakdown Voltage-Min |
1200 V
|
1200 V
|
Drain Current-Max (ID) |
44 A
|
33 A
|
Drain-source On Resistance-Max |
0.11 Ω
|
0.11 Ω
|
FET Technology |
METAL-OXIDE SEMICONDUCTOR
|
METAL-OXIDE SEMICONDUCTOR
|
Feedback Cap-Max (Crss) |
10 pF
|
|
JEDEC-95 Code |
TO-247
|
TO-247
|
JESD-30 Code |
R-PSFM-T3
|
R-PSFM-T3
|
JESD-609 Code |
e3
|
e3
|
Number of Elements |
1
|
1
|
Number of Terminals |
3
|
3
|
Operating Mode |
ENHANCEMENT MODE
|
ENHANCEMENT MODE
|
Operating Temperature-Max |
175 °C
|
|
Operating Temperature-Min |
-55 °C
|
|
Package Body Material |
PLASTIC/EPOXY
|
PLASTIC/EPOXY
|
Package Shape |
RECTANGULAR
|
RECTANGULAR
|
Package Style |
FLANGE MOUNT
|
FLANGE MOUNT
|
Peak Reflow Temperature (Cel) |
NOT SPECIFIED
|
NOT SPECIFIED
|
Polarity/Channel Type |
N-CHANNEL
|
N-CHANNEL
|
Power Dissipation-Max (Abs) |
348 W
|
|
Pulsed Drain Current-Max (IDM) |
136 A
|
78 A
|
Reference Standard |
AEC-Q101
|
|
Surface Mount |
NO
|
NO
|
Terminal Finish |
Matte Tin (Sn) - annealed
|
Matte Tin (Sn)
|
Terminal Form |
THROUGH-HOLE
|
THROUGH-HOLE
|
Terminal Position |
SINGLE
|
SINGLE
|
Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED
|
NOT SPECIFIED
|
Transistor Application |
SWITCHING
|
SWITCHING
|
Transistor Element Material |
SILICON CARBIDE
|
SILICON CARBIDE
|
Turn-off Time-Max (toff) |
61 ns
|
|
Turn-on Time-Max (ton) |
25 ns
|
|
Base Number Matches |
1
|
1
|
Rohs Code |
|
Yes
|
Package Description |
|
HALOGEN FREE AND ROHS COMPLIANT PACKAGE-3
|
Qualification Status |
|
Not Qualified
|
|
|
|
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