NVHL080N120SC1A vs MSC080SMA120S feature comparison

NVHL080N120SC1A onsemi

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MSC080SMA120S Microsemi Corporation

Buy Now Datasheet
Pbfree Code Yes
Part Life Cycle Code Active Transferred
Ihs Manufacturer ONSEMI MICROSEMI CORP
Manufacturer Package Code 340CX
Reach Compliance Code not_compliant unknown
ECCN Code EAR99 EAR99
Factory Lead Time 67 Weeks
Date Of Intro 2020-04-22 2020-01-29
Samacsys Manufacturer onsemi Microsemi Corporation
Avalanche Energy Rating (Eas) 171 mJ
Configuration SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 1200 V 1200 V
Drain Current-Max (ID) 31 A 35 A
Drain-source On Resistance-Max 0.11 Ω 0.1 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
Feedback Cap-Max (Crss) 6.5 pF
JEDEC-95 Code TO-247 TO-268AA
JESD-30 Code R-PSFM-T3 R-PSSO-G2
JESD-609 Code e3
Moisture Sensitivity Level 1
Number of Elements 1 1
Number of Terminals 3 2
Operating Mode ENHANCEMENT MODE ENHANCEMENT MODE
Operating Temperature-Max 175 °C 175 °C
Operating Temperature-Min -55 °C -55 °C
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style FLANGE MOUNT SMALL OUTLINE
Peak Reflow Temperature (Cel) 260
Polarity/Channel Type N-CHANNEL N-CHANNEL
Power Dissipation-Max (Abs) 178 W 182 W
Pulsed Drain Current-Max (IDM) 132 A 87 A
Reference Standard AEC-Q101
Surface Mount NO YES
Terminal Finish MATTE TIN
Terminal Form THROUGH-HOLE GULL WING
Terminal Position SINGLE SINGLE
Time@Peak Reflow Temperature-Max (s) 30
Transistor Application SWITCHING SWITCHING
Transistor Element Material SILICON CARBIDE SILICON CARBIDE
Base Number Matches 1 1
Rohs Code Yes
Package Description TO-268, D3PAK-3/2
Case Connection DRAIN

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