NVHL080N120SC1A vs NTHL080N120SC1 feature comparison

NVHL080N120SC1A onsemi

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NTHL080N120SC1 onsemi

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Pbfree Code Yes Yes
Part Life Cycle Code Active End Of Life
Ihs Manufacturer ONSEMI ONSEMI
Manufacturer Package Code 340CX 340CX
Reach Compliance Code not_compliant not_compliant
ECCN Code EAR99 EAR99
Factory Lead Time 67 Weeks
Date Of Intro 2020-04-22 2018-12-21
Samacsys Manufacturer onsemi onsemi
Avalanche Energy Rating (Eas) 171 mJ 171 mJ
Configuration SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 1200 V 1200 V
Drain Current-Max (ID) 31 A 31 A
Drain-source On Resistance-Max 0.11 Ω 0.11 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
Feedback Cap-Max (Crss) 6.5 pF 6.5 pF
JEDEC-95 Code TO-247 TO-247
JESD-30 Code R-PSFM-T3 R-PSFM-T3
JESD-609 Code e3 e3
Moisture Sensitivity Level 1
Number of Elements 1 1
Number of Terminals 3 3
Operating Mode ENHANCEMENT MODE ENHANCEMENT MODE
Operating Temperature-Max 175 °C 175 °C
Operating Temperature-Min -55 °C -55 °C
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style FLANGE MOUNT FLANGE MOUNT
Peak Reflow Temperature (Cel) 260
Polarity/Channel Type N-CHANNEL N-CHANNEL
Power Dissipation-Max (Abs) 178 W 178 W
Pulsed Drain Current-Max (IDM) 132 A 132 A
Reference Standard AEC-Q101
Surface Mount NO NO
Terminal Finish MATTE TIN Matte Tin (Sn) - annealed
Terminal Form THROUGH-HOLE THROUGH-HOLE
Terminal Position SINGLE SINGLE
Time@Peak Reflow Temperature-Max (s) 30
Transistor Application SWITCHING SWITCHING
Transistor Element Material SILICON CARBIDE SILICON CARBIDE
Base Number Matches 1 1

Compare NVHL080N120SC1A with alternatives

Compare NTHL080N120SC1 with alternatives