NVMFS5C612NLWFAFT1G
vs
NVMFS5C612NLWFT3G
feature comparison
Pbfree Code |
Yes
|
Yes
|
Part Life Cycle Code |
Active
|
Obsolete
|
Ihs Manufacturer |
ONSEMI
|
ON SEMICONDUCTOR
|
Package Description |
SO-8FL, DFN5, 6 PIN
|
,
|
Manufacturer Package Code |
507BE
|
507BE
|
Reach Compliance Code |
not_compliant
|
not_compliant
|
ECCN Code |
EAR99
|
EAR99
|
Factory Lead Time |
69 Weeks
|
|
Date Of Intro |
2017-02-24
|
|
Samacsys Manufacturer |
onsemi
|
onsemi
|
Avalanche Energy Rating (Eas) |
451 mJ
|
|
Case Connection |
DRAIN
|
|
Configuration |
SINGLE WITH BUILT-IN DIODE
|
SINGLE
|
DS Breakdown Voltage-Min |
60 V
|
|
Drain Current-Max (ID) |
250 A
|
235 A
|
Drain-source On Resistance-Max |
0.0023 Ω
|
|
FET Technology |
METAL-OXIDE SEMICONDUCTOR
|
METAL-OXIDE SEMICONDUCTOR
|
Feedback Cap-Max (Crss) |
45 pF
|
|
JESD-30 Code |
R-PDSO-F5
|
|
JESD-609 Code |
e3
|
e3
|
Moisture Sensitivity Level |
1
|
1
|
Number of Elements |
1
|
1
|
Number of Terminals |
5
|
|
Operating Mode |
ENHANCEMENT MODE
|
|
Operating Temperature-Max |
175 °C
|
175 °C
|
Operating Temperature-Min |
-55 °C
|
|
Package Body Material |
PLASTIC/EPOXY
|
|
Package Shape |
RECTANGULAR
|
|
Package Style |
SMALL OUTLINE
|
|
Peak Reflow Temperature (Cel) |
260
|
260
|
Polarity/Channel Type |
N-CHANNEL
|
N-CHANNEL
|
Power Dissipation-Max (Abs) |
167 W
|
167 W
|
Pulsed Drain Current-Max (IDM) |
900 A
|
|
Reference Standard |
AEC-Q101
|
|
Surface Mount |
YES
|
YES
|
Terminal Finish |
Matte Tin (Sn) - annealed
|
Matte Tin (Sn) - annealed
|
Terminal Form |
FLAT
|
|
Terminal Position |
DUAL
|
|
Time@Peak Reflow Temperature-Max (s) |
30
|
30
|
Transistor Element Material |
SILICON
|
|
Base Number Matches |
1
|
1
|
|
|
|
Compare NVMFS5C612NLWFAFT1G with alternatives
Compare NVMFS5C612NLWFT3G with alternatives