NVTFS5820NLT1G
vs
NVTFS5C673NLTAG
feature comparison
| Rohs Code |
Yes
|
|
| Part Life Cycle Code |
Obsolete
|
Active
|
| Ihs Manufacturer |
ON SEMICONDUCTOR
|
ONSEMI
|
| Part Package Code |
DFN
|
|
| Package Description |
SMALL OUTLINE, S-PDSO-F5
|
WDFN-8, 5 PIN
|
| Pin Count |
8
|
|
| Manufacturer Package Code |
CASE 511AB-01
|
511AB
|
| Reach Compliance Code |
compliant
|
not_compliant
|
| ECCN Code |
EAR99
|
EAR99
|
| Avalanche Energy Rating (Eas) |
48 mJ
|
88 mJ
|
| Case Connection |
DRAIN
|
DRAIN
|
| Configuration |
SINGLE WITH BUILT-IN DIODE
|
SINGLE WITH BUILT-IN DIODE
|
| DS Breakdown Voltage-Min |
60 V
|
60 V
|
| Drain Current-Max (ID) |
11 A
|
13 A
|
| Drain-source On Resistance-Max |
0.015 Ω
|
0.015 Ω
|
| FET Technology |
METAL-OXIDE SEMICONDUCTOR
|
METAL-OXIDE SEMICONDUCTOR
|
| JESD-30 Code |
S-PDSO-F8
|
S-PDSO-F5
|
| Number of Elements |
1
|
1
|
| Number of Terminals |
8
|
5
|
| Operating Mode |
ENHANCEMENT MODE
|
ENHANCEMENT MODE
|
| Operating Temperature-Max |
175 °C
|
175 °C
|
| Package Body Material |
PLASTIC/EPOXY
|
PLASTIC/EPOXY
|
| Package Shape |
SQUARE
|
SQUARE
|
| Package Style |
SMALL OUTLINE
|
SMALL OUTLINE
|
| Peak Reflow Temperature (Cel) |
NOT SPECIFIED
|
260
|
| Polarity/Channel Type |
N-CHANNEL
|
N-CHANNEL
|
| Pulsed Drain Current-Max (IDM) |
247 A
|
290 A
|
| Qualification Status |
Not Qualified
|
|
| Surface Mount |
YES
|
YES
|
| Terminal Form |
FLAT
|
FLAT
|
| Terminal Position |
DUAL
|
DUAL
|
| Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED
|
30
|
| Transistor Element Material |
SILICON
|
SILICON
|
| Base Number Matches |
1
|
1
|
| Pbfree Code |
|
Yes
|
| Factory Lead Time |
|
65 Weeks
|
| Samacsys Manufacturer |
|
onsemi
|
| JESD-609 Code |
|
e3
|
| Moisture Sensitivity Level |
|
1
|
| Operating Temperature-Min |
|
-55 °C
|
| Reference Standard |
|
AEC-Q101
|
| Terminal Finish |
|
Matte Tin (Sn) - annealed
|
|
|
|
Compare NVTFS5820NLT1G with alternatives
Compare NVTFS5C673NLTAG with alternatives