P4KE120C vs P4KE120C feature comparison

P4KE120C International Semiconductor Inc

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P4KE120C Diodes Incorporated

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Part Life Cycle Code Obsolete Obsolete
Ihs Manufacturer INTERNATIONAL SEMICONDUCTOR INC DIODES INC
Reach Compliance Code unknown compliant
ECCN Code EAR99 EAR99
HTS Code 8541.10.00.50 8541.10.00.50
Additional Feature LOW IMPEDANCE
Breakdown Voltage-Max 132 V 132 V
Breakdown Voltage-Min 108 V 108 V
Case Connection ISOLATED ISOLATED
Clamping Voltage-Max 173 V 173 V
Configuration SINGLE SINGLE
Diode Element Material SILICON SILICON
Diode Type TRANS VOLTAGE SUPPRESSOR DIODE TRANS VOLTAGE SUPPRESSOR DIODE
JESD-30 Code O-PALF-W2 O-PALF-W2
Non-rep Peak Rev Power Dis-Max 400 W 400 W
Number of Elements 1 1
Number of Terminals 2 2
Operating Temperature-Max 150 °C
Operating Temperature-Min -65 °C
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape ROUND ROUND
Package Style LONG FORM LONG FORM
Polarity BIDIRECTIONAL BIDIRECTIONAL
Power Dissipation-Max 1 W 1 W
Qualification Status Not Qualified Not Qualified
Reverse Current-Max 5 µA
Surface Mount NO NO
Technology AVALANCHE AVALANCHE
Terminal Form WIRE WIRE
Terminal Position AXIAL AXIAL
Base Number Matches 2 2
Rohs Code No
Part Package Code DO-41
Package Description PLASTIC PACKAGE-2
Pin Count 2
Breakdown Voltage-Nom 120 V
JEDEC-95 Code DO-41
JESD-609 Code e0
Rep Pk Reverse Voltage-Max 97.2 V
Terminal Finish TIN LEAD

Compare P4KE120C with alternatives

Compare P4KE120C with alternatives