P6KE110
vs
JANTXV1N6107A
feature comparison
| Part Life Cycle Code |
Obsolete
|
Transferred
|
| Ihs Manufacturer |
INTERNATIONAL SEMICONDUCTOR INC
|
MICROSEMI CORP
|
| Reach Compliance Code |
unknown
|
unknown
|
| ECCN Code |
EAR99
|
|
| HTS Code |
8541.10.00.50
|
|
| Additional Feature |
LOW IMPEDANCE
|
HIGH RELIABILITY
|
| Breakdown Voltage-Max |
121 V
|
|
| Breakdown Voltage-Min |
99 V
|
9.9 V
|
| Breakdown Voltage-Nom |
110 V
|
|
| Case Connection |
ISOLATED
|
ISOLATED
|
| Clamping Voltage-Max |
158 V
|
|
| Configuration |
SINGLE
|
SINGLE
|
| Diode Element Material |
SILICON
|
SILICON
|
| Diode Type |
TRANS VOLTAGE SUPPRESSOR DIODE
|
TRANS VOLTAGE SUPPRESSOR DIODE
|
| JESD-30 Code |
O-PALF-W2
|
O-LALF-W2
|
| Non-rep Peak Rev Power Dis-Max |
600 W
|
500 W
|
| Number of Elements |
1
|
1
|
| Number of Terminals |
2
|
2
|
| Operating Temperature-Max |
175 °C
|
|
| Operating Temperature-Min |
-65 °C
|
|
| Package Body Material |
PLASTIC/EPOXY
|
GLASS
|
| Package Shape |
ROUND
|
ROUND
|
| Package Style |
LONG FORM
|
LONG FORM
|
| Polarity |
UNIDIRECTIONAL
|
BIDIRECTIONAL
|
| Power Dissipation-Max |
1 W
|
3 W
|
| Qualification Status |
Not Qualified
|
Not Qualified
|
| Rep Pk Reverse Voltage-Max |
89.2 V
|
8.4 V
|
| Reverse Current-Max |
5 µA
|
|
| Surface Mount |
NO
|
NO
|
| Technology |
AVALANCHE
|
AVALANCHE
|
| Terminal Form |
WIRE
|
WIRE
|
| Terminal Position |
AXIAL
|
AXIAL
|
| Base Number Matches |
70
|
9
|
| Rohs Code |
|
No
|
| Package Description |
|
HERMETIC SEALED, GLASS PACKAGE-2
|
| JESD-609 Code |
|
e0
|
| Reference Standard |
|
MIL-19500/516
|
| Terminal Finish |
|
TIN LEAD
|
|
|
|
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