P6SMB13AHM3/H vs MXLSMBJ10AE3TR feature comparison

P6SMB13AHM3/H Vishay Intertechnologies

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MXLSMBJ10AE3TR Microsemi Corporation

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Rohs Code Yes Yes
Part Life Cycle Code Obsolete Transferred
Ihs Manufacturer VISHAY INTERTECHNOLOGY INC MICROSEMI CORP
Reach Compliance Code unknown unknown
ECCN Code EAR99 EAR99
HTS Code 8541.10.00.50 8541.10.00.50
Diode Type TRANS VOLTAGE SUPPRESSOR DIODE TRANS VOLTAGE SUPPRESSOR DIODE
JESD-609 Code e3 e3
Moisture Sensitivity Level 1 1
Peak Reflow Temperature (Cel) 260 250
Terminal Finish Matte Tin (Sn) Matte Tin (Sn) - annealed
Time@Peak Reflow Temperature-Max (s) 30 30
Base Number Matches 1 1
Pbfree Code Yes
Part Package Code DO-214AA
Package Description R-PDSO-C2
Pin Count 2
Additional Feature HIGH RELIABILITY
Breakdown Voltage-Max 12.3 V
Breakdown Voltage-Min 11.1 V
Breakdown Voltage-Nom 11.7 V
Clamping Voltage-Max 17 V
Configuration SINGLE
Diode Element Material SILICON
JEDEC-95 Code DO-214AA
JESD-30 Code R-PDSO-C2
Non-rep Peak Rev Power Dis-Max 600 W
Number of Elements 1
Number of Terminals 2
Operating Temperature-Max 150 °C
Operating Temperature-Min -65 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Polarity UNIDIRECTIONAL
Power Dissipation-Max 1.38 W
Qualification Status Not Qualified
Rep Pk Reverse Voltage-Max 10 V
Surface Mount YES
Technology AVALANCHE
Terminal Form C BEND
Terminal Position DUAL

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