P6SMB13ATR13
vs
P6SMB13AHM3/I
feature comparison
| Pbfree Code |
No
|
|
| Rohs Code |
No
|
Yes
|
| Part Life Cycle Code |
Active
|
Obsolete
|
| Ihs Manufacturer |
CENTRAL SEMICONDUCTOR CORP
|
VISHAY INTERTECHNOLOGY INC
|
| Reach Compliance Code |
not_compliant
|
unknown
|
| ECCN Code |
EAR99
|
EAR99
|
| HTS Code |
8541.10.00.50
|
8541.10.00.50
|
| Breakdown Voltage-Max |
13.7 V
|
|
| Breakdown Voltage-Min |
12.4 V
|
|
| Breakdown Voltage-Nom |
13 V
|
|
| Clamping Voltage-Max |
18.2 V
|
|
| Configuration |
SINGLE
|
|
| Diode Element Material |
SILICON
|
|
| Diode Type |
TRANS VOLTAGE SUPPRESSOR DIODE
|
TRANS VOLTAGE SUPPRESSOR DIODE
|
| JESD-30 Code |
R-PDSO-C2
|
|
| JESD-609 Code |
e0
|
e3
|
| Non-rep Peak Rev Power Dis-Max |
600 W
|
|
| Number of Elements |
1
|
|
| Number of Terminals |
2
|
|
| Operating Temperature-Max |
150 °C
|
|
| Operating Temperature-Min |
-65 °C
|
|
| Package Body Material |
PLASTIC/EPOXY
|
|
| Package Shape |
RECTANGULAR
|
|
| Package Style |
SMALL OUTLINE
|
|
| Polarity |
UNIDIRECTIONAL
|
|
| Qualification Status |
Not Qualified
|
|
| Rep Pk Reverse Voltage-Max |
11.1 V
|
|
| Surface Mount |
YES
|
|
| Technology |
AVALANCHE
|
|
| Terminal Finish |
TIN LEAD
|
Matte Tin (Sn)
|
| Terminal Form |
C BEND
|
|
| Terminal Position |
DUAL
|
|
| Base Number Matches |
1
|
1
|
| Date Of Intro |
|
2017-08-23
|
| Moisture Sensitivity Level |
|
1
|
| Peak Reflow Temperature (Cel) |
|
260
|
| Time@Peak Reflow Temperature-Max (s) |
|
30
|
|
|
|
Compare P6SMB13ATR13 with alternatives
Compare P6SMB13AHM3/I with alternatives