P6SMB200ATIN/LEAD
vs
P6SMB200A
feature comparison
| Rohs Code |
No
|
Yes
|
| Part Life Cycle Code |
Active
|
Active
|
| Ihs Manufacturer |
CENTRAL SEMICONDUCTOR CORP
|
YAGEO CORP
|
| Package Description |
R-PDSO-C2
|
|
| Reach Compliance Code |
not_compliant
|
compliant
|
| ECCN Code |
EAR99
|
EAR99
|
| HTS Code |
8541.10.00.50
|
8541.10.00.50
|
| Breakdown Voltage-Max |
210 V
|
210 V
|
| Breakdown Voltage-Min |
190 V
|
190 V
|
| Breakdown Voltage-Nom |
200 V
|
200 V
|
| Configuration |
SINGLE
|
SINGLE
|
| Diode Element Material |
SILICON
|
SILICON
|
| Diode Type |
TRANS VOLTAGE SUPPRESSOR DIODE
|
TRANS VOLTAGE SUPPRESSOR DIODE
|
| JESD-30 Code |
R-PDSO-C2
|
R-PDSO-C2
|
| JESD-609 Code |
e0
|
e3
|
| Non-rep Peak Rev Power Dis-Max |
600 W
|
600 W
|
| Number of Elements |
1
|
1
|
| Number of Terminals |
2
|
2
|
| Operating Temperature-Max |
150 °C
|
150 °C
|
| Operating Temperature-Min |
-65 °C
|
-55 °C
|
| Package Body Material |
PLASTIC/EPOXY
|
PLASTIC/EPOXY
|
| Package Shape |
RECTANGULAR
|
RECTANGULAR
|
| Package Style |
SMALL OUTLINE
|
SMALL OUTLINE
|
| Polarity |
UNIDIRECTIONAL
|
UNIDIRECTIONAL
|
| Rep Pk Reverse Voltage-Max |
171 V
|
171 V
|
| Reverse Current-Max |
5 µA
|
1 µA
|
| Reverse Test Voltage |
171 V
|
171 V
|
| Surface Mount |
YES
|
YES
|
| Technology |
AVALANCHE
|
AVALANCHE
|
| Terminal Finish |
TIN LEAD
|
TIN
|
| Terminal Form |
C BEND
|
C BEND
|
| Terminal Position |
DUAL
|
DUAL
|
| Base Number Matches |
1
|
31
|
| Date Of Intro |
|
2018-11-05
|
| Additional Feature |
|
EXCELLENT CLAMPING CAPABILITY, TR, 7 INCH: 500
|
| Clamping Voltage-Max |
|
274 V
|
| JEDEC-95 Code |
|
DO-214AA
|
| Moisture Sensitivity Level |
|
1
|
| Peak Reflow Temperature (Cel) |
|
260
|
| Power Dissipation-Max |
|
5 W
|
| Reference Standard |
|
UL CERTIFIED
|
| Time@Peak Reflow Temperature-Max (s) |
|
40
|
|
|
|
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