P6SMB200A_R2_00001
vs
P6SMB200AHE3TRTS
feature comparison
Pbfree Code |
Yes
|
|
Rohs Code |
Yes
|
|
Part Life Cycle Code |
Active
|
|
Ihs Manufacturer |
PAN JIT INTERNATIONAL INC
|
|
Package Description |
R-PDSO-C2
|
|
Reach Compliance Code |
not_compliant
|
|
ECCN Code |
EAR99
|
|
HTS Code |
8541.10.00.50
|
|
Samacsys Manufacturer |
PANJIT
|
|
Breakdown Voltage-Max |
210 V
|
|
Breakdown Voltage-Min |
190 V
|
|
Breakdown Voltage-Nom |
200 V
|
|
Clamping Voltage-Max |
274 V
|
|
Configuration |
SINGLE
|
|
Diode Element Material |
SILICON
|
|
Diode Type |
TRANS VOLTAGE SUPPRESSOR DIODE
|
|
JEDEC-95 Code |
DO-214AA
|
|
JESD-30 Code |
R-PDSO-C2
|
|
JESD-609 Code |
e3
|
|
Non-rep Peak Rev Power Dis-Max |
600 W
|
|
Number of Elements |
1
|
|
Number of Terminals |
2
|
|
Operating Temperature-Max |
150 °C
|
|
Operating Temperature-Min |
-55 °C
|
|
Package Body Material |
PLASTIC/EPOXY
|
|
Package Shape |
RECTANGULAR
|
|
Package Style |
SMALL OUTLINE
|
|
Polarity |
UNIDIRECTIONAL
|
|
Reference Standard |
IEC-61000-4-2
|
|
Rep Pk Reverse Voltage-Max |
171 V
|
|
Reverse Current-Max |
1 µA
|
|
Reverse Test Voltage |
171 V
|
|
Surface Mount |
YES
|
|
Technology |
AVALANCHE
|
|
Terminal Finish |
TIN
|
|
Terminal Form |
C BEND
|
|
Terminal Position |
DUAL
|
|
Base Number Matches |
1
|
|
|
|
|
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