P6SMBJ11A vs SMBJP6KE11AE3 feature comparison

P6SMBJ11A Cheng-Yi Electronic Co Ltd

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SMBJP6KE11AE3 Microsemi Corporation

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Part Life Cycle Code Contact Manufacturer Obsolete
Ihs Manufacturer CHENG-YI ELECTRONIC CO LTD MICROSEMI CORP
Reach Compliance Code unknown compliant
ECCN Code EAR99 EAR99
HTS Code 8541.10.00.50 8541.10.00.50
Base Number Matches 11 1
Package Description R-PDSO-C2
Breakdown Voltage-Max 11.6 V
Breakdown Voltage-Min 10.5 V
Configuration SINGLE
Diode Element Material SILICON
Diode Type TRANS VOLTAGE SUPPRESSOR DIODE
JEDEC-95 Code DO-214AA
JESD-30 Code R-PDSO-C2
Non-rep Peak Rev Power Dis-Max 600 W
Number of Elements 1
Number of Terminals 2
Operating Temperature-Max 150 °C
Operating Temperature-Min -65 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Polarity UNIDIRECTIONAL
Power Dissipation-Max 1.38 W
Rep Pk Reverse Voltage-Max 9.4 V
Surface Mount YES
Technology AVALANCHE
Terminal Form C BEND
Terminal Position DUAL

Compare P6SMBJ11A with alternatives

Compare SMBJP6KE11AE3 with alternatives