PDTA115EM,315 vs PDTA115ES feature comparison

PDTA115EM,315 NXP Semiconductors

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PDTA115ES Philips Semiconductors

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Rohs Code Yes Yes
Part Life Cycle Code Transferred Transferred
Ihs Manufacturer NXP SEMICONDUCTORS PHILIPS SEMICONDUCTORS
Part Package Code DFN
Package Description 1 X 0.60 MM, 0.50 MM HEIGHT, LEADLESS, ULTRA SMALL, PLASTIC, SC-101, 3 PIN ,
Pin Count 3
Manufacturer Package Code SOT883
Reach Compliance Code compliant unknown
ECCN Code EAR99 EAR99
Factory Lead Time 4 Weeks
Additional Feature BUILT-IN BIAS RESISTOR RATIO IS 1
Case Connection COLLECTOR
Collector Current-Max (IC) 0.02 A 0.02 A
Collector-Emitter Voltage-Max 50 V
Configuration SINGLE WITH BUILT-IN RESISTOR
DC Current Gain-Min (hFE) 80 80
JESD-30 Code R-PBCC-N3
JESD-609 Code e3 e3
Moisture Sensitivity Level 1 1
Number of Elements 1 1
Number of Terminals 3
Operating Temperature-Max 150 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style CHIP CARRIER
Peak Reflow Temperature (Cel) 260
Polarity/Channel Type PNP PNP
Power Dissipation-Max (Abs) 0.25 W 0.5 W
Qualification Status Not Qualified
Surface Mount YES YES
Terminal Finish TIN Matte Tin (Sn)
Terminal Form NO LEAD
Terminal Position BOTTOM
Time@Peak Reflow Temperature-Max (s) 30
Transistor Application SWITCHING
Transistor Element Material SILICON SILICON
Base Number Matches 2 3

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