PDTA124ET/T4
vs
MUN5216DW1T2
feature comparison
Part Life Cycle Code |
Active
|
Obsolete
|
Ihs Manufacturer |
NEXPERIA
|
ON SEMICONDUCTOR
|
Package Description |
SMALL OUTLINE, R-PDSO-G3
|
SMALL OUTLINE, R-PDSO-G6
|
Reach Compliance Code |
compliant
|
unknown
|
ECCN Code |
EAR99
|
EAR99
|
Date Of Intro |
2017-02-01
|
|
Additional Feature |
BUILT-IN BIAS RESISTOR RATIO IS 1
|
|
Collector Current-Max (IC) |
0.1 A
|
0.1 A
|
Collector-Emitter Voltage-Max |
50 V
|
50 V
|
Configuration |
SINGLE WITH BUILT-IN RESISTOR
|
SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR
|
DC Current Gain-Min (hFE) |
60
|
160
|
JEDEC-95 Code |
TO-236AB
|
|
JESD-30 Code |
R-PDSO-G3
|
R-PDSO-G6
|
JESD-609 Code |
e3
|
|
Moisture Sensitivity Level |
1
|
|
Number of Elements |
1
|
2
|
Number of Terminals |
3
|
6
|
Package Body Material |
PLASTIC/EPOXY
|
PLASTIC/EPOXY
|
Package Shape |
RECTANGULAR
|
RECTANGULAR
|
Package Style |
SMALL OUTLINE
|
SMALL OUTLINE
|
Peak Reflow Temperature (Cel) |
260
|
|
Polarity/Channel Type |
PNP
|
NPN
|
Surface Mount |
YES
|
YES
|
Terminal Finish |
TIN
|
|
Terminal Form |
GULL WING
|
GULL WING
|
Terminal Position |
DUAL
|
DUAL
|
Time@Peak Reflow Temperature-Max (s) |
30
|
|
Transistor Application |
SWITCHING
|
|
Transistor Element Material |
SILICON
|
SILICON
|
Transition Frequency-Nom (fT) |
100 MHz
|
|
Base Number Matches |
2
|
3
|
Pin Count |
|
6
|
Manufacturer Package Code |
|
CASE 419B-01
|
Qualification Status |
|
Not Qualified
|
|
|
|
Compare PDTA124ET/T4 with alternatives
Compare MUN5216DW1T2 with alternatives