PDTA124ETT/R vs MSD601-ST1 feature comparison

PDTA124ETT/R NXP Semiconductors

Buy Now Datasheet

MSD601-ST1 onsemi

Buy Now Datasheet
Rohs Code Yes
Part Life Cycle Code Transferred Obsolete
Ihs Manufacturer NXP SEMICONDUCTORS ON SEMICONDUCTOR
Part Package Code SOT-23 SC-59 3 LEAD
Package Description SMALL OUTLINE, R-PDSO-G3 SMALL OUTLINE, R-PDSO-G3
Pin Count 3 3
Reach Compliance Code unknown not_compliant
ECCN Code EAR99 EAR99
Additional Feature BUILT-IN BIAS RESISTOR RATIO IS 1
Collector Current-Max (IC) 0.1 A 0.1 A
Collector-Base Capacitance-Max 5 pF
Collector-Emitter Voltage-Max 50 V 50 V
Configuration SINGLE WITH BUILT-IN RESISTOR SINGLE
DC Current Gain-Min (hFE) 60 290
JEDEC-95 Code TO-236AB
JESD-30 Code R-PDSO-G3 R-PDSO-G3
JESD-609 Code e3 e0
Number of Elements 1 1
Number of Terminals 3 3
Operating Temperature-Max 150 °C 150 °C
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style SMALL OUTLINE SMALL OUTLINE
Peak Reflow Temperature (Cel) NOT SPECIFIED 235
Polarity/Channel Type PNP NPN
Qualification Status Not Qualified Not Qualified
Surface Mount YES YES
Terminal Finish Tin (Sn) Tin/Lead (Sn/Pb)
Terminal Form GULL WING GULL WING
Terminal Position DUAL DUAL
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED 30
Transistor Application SWITCHING SWITCHING
Transistor Element Material SILICON SILICON
Transition Frequency-Nom (fT) 100 MHz
VCEsat-Max 0.3 V 0.5 V
Base Number Matches 2 5
Pbfree Code No
Manufacturer Package Code 318D-04
HTS Code 8541.21.00.95
Factory Lead Time 4 Weeks
Samacsys Manufacturer onsemi
Moisture Sensitivity Level 1
Power Dissipation Ambient-Max 0.2 W
Power Dissipation-Max (Abs) 0.2 W

Compare PDTA124ETT/R with alternatives

Compare MSD601-ST1 with alternatives