PDTA144TM,315 vs RN1202 feature comparison

PDTA144TM,315 NXP Semiconductors

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RN1202 Toshiba America Electronic Components

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Rohs Code Yes
Part Life Cycle Code Transferred Obsolete
Ihs Manufacturer NXP SEMICONDUCTORS TOSHIBA CORP
Part Package Code DFN
Package Description 1 X 0.60 MM, 0.50 MM HEIGHT, LEAD LESS, ULTRA SMALL, PLASTIC, SC-101, 3 PIN IN-LINE, R-PSIP-T3
Pin Count 3 3
Manufacturer Package Code SOT883
Reach Compliance Code compliant unknown
ECCN Code EAR99 EAR99
Factory Lead Time 4 Weeks
Additional Feature BUILT-IN BIAS RESISTOR BUILT-IN BIAS RESISTOR RATIO IS 1
Case Connection COLLECTOR
Collector Current-Max (IC) 0.1 A 0.1 A
Collector-Emitter Voltage-Max 50 V 50 V
Configuration SINGLE WITH BUILT-IN RESISTOR SINGLE WITH BUILT-IN RESISTOR
DC Current Gain-Min (hFE) 100 50
JESD-30 Code R-PBCC-N3 R-PSIP-T3
JESD-609 Code e3 e0
Moisture Sensitivity Level 1
Number of Elements 1 1
Number of Terminals 3 3
Operating Temperature-Max 150 °C 150 °C
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style CHIP CARRIER IN-LINE
Peak Reflow Temperature (Cel) 260
Polarity/Channel Type PNP NPN
Power Dissipation-Max (Abs) 0.25 W 0.3 W
Qualification Status Not Qualified Not Qualified
Surface Mount YES NO
Terminal Finish TIN TIN LEAD
Terminal Form NO LEAD THROUGH-HOLE
Terminal Position BOTTOM SINGLE
Time@Peak Reflow Temperature-Max (s) 30
Transistor Application SWITCHING SWITCHING
Transistor Element Material SILICON SILICON
Base Number Matches 2 1
Samacsys Manufacturer Toshiba
Collector-Base Capacitance-Max 6 pF
Transition Frequency-Nom (fT) 250 MHz
VCEsat-Max 0.3 V

Compare PDTA144TM,315 with alternatives

Compare RN1202 with alternatives