PDTA144TMB vs RN1202 feature comparison

PDTA144TMB NXP Semiconductors

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RN1202 Toshiba America Electronic Components

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Rohs Code Yes
Part Life Cycle Code Transferred Obsolete
Ihs Manufacturer NXP SEMICONDUCTORS TOSHIBA CORP
Package Description , IN-LINE, R-PSIP-T3
Reach Compliance Code unknown unknown
ECCN Code EAR99 EAR99
JESD-609 Code e3 e0
Moisture Sensitivity Level 1
Terminal Finish TIN TIN LEAD
Base Number Matches 2 1
Pin Count 3
Samacsys Manufacturer Toshiba
Additional Feature BUILT-IN BIAS RESISTOR RATIO IS 1
Collector Current-Max (IC) 0.1 A
Collector-Base Capacitance-Max 6 pF
Collector-Emitter Voltage-Max 50 V
Configuration SINGLE WITH BUILT-IN RESISTOR
DC Current Gain-Min (hFE) 50
JESD-30 Code R-PSIP-T3
Number of Elements 1
Number of Terminals 3
Operating Temperature-Max 150 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style IN-LINE
Polarity/Channel Type NPN
Power Dissipation-Max (Abs) 0.3 W
Qualification Status Not Qualified
Surface Mount NO
Terminal Form THROUGH-HOLE
Terminal Position SINGLE
Transistor Application SWITCHING
Transistor Element Material SILICON
Transition Frequency-Nom (fT) 250 MHz
VCEsat-Max 0.3 V

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