PDTC144EET/R vs MMBT5086 feature comparison

PDTC144EET/R NXP Semiconductors

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MMBT5086 National Semiconductor Corporation

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Rohs Code Yes No
Part Life Cycle Code Transferred Transferred
Ihs Manufacturer NXP SEMICONDUCTORS NATIONAL SEMICONDUCTOR CORP
Part Package Code SC-75
Package Description SMALL OUTLINE, R-PDSO-G3
Pin Count 3
Reach Compliance Code unknown unknown
ECCN Code EAR99 EAR99
Additional Feature BUILT IN BIAS RESISTANCE RATIO IS 1 LOW NOISE
Collector Current-Max (IC) 0.1 A 0.1 A
Collector-Emitter Voltage-Max 50 V 50 V
Configuration SINGLE WITH BUILT-IN RESISTOR SINGLE
DC Current Gain-Min (hFE) 80 150
JESD-30 Code R-PDSO-G3 R-PDSO-G3
JESD-609 Code e3 e0
Number of Elements 1 1
Number of Terminals 3 3
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style SMALL OUTLINE SMALL OUTLINE
Polarity/Channel Type NPN PNP
Qualification Status Not Qualified Not Qualified
Surface Mount YES YES
Terminal Finish TIN Tin/Lead (Sn/Pb)
Terminal Form GULL WING GULL WING
Terminal Position DUAL DUAL
Transistor Application SWITCHING AMPLIFIER
Transistor Element Material SILICON SILICON
Base Number Matches 1 1
HTS Code 8541.21.00.95
Collector-Base Capacitance-Max 4 pF
JEDEC-95 Code TO-236AB
Operating Temperature-Max 150 °C
Power Dissipation Ambient-Max 0.35 W
Power Dissipation-Max (Abs) 0.225 W
Transition Frequency-Nom (fT) 40 MHz
VCEsat-Max 0.3 V

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