PDTD114ET vs PDTD114ET-T feature comparison

PDTD114ET NXP Semiconductors

Buy Now Datasheet

PDTD114ET-T NXP Semiconductors

Buy Now Datasheet
Part Life Cycle Code Transferred Obsolete
Ihs Manufacturer NXP SEMICONDUCTORS NXP SEMICONDUCTORS
Part Package Code SOT-23
Package Description SOT-23, 3 PIN SMALL OUTLINE, R-PDSO-G3
Pin Count 3
Reach Compliance Code unknown unknown
ECCN Code EAR99 EAR99
Additional Feature BUILT IN BIAS RESISTOR RATIO IS 1 BUILT IN BIAS RESISTOR RATIO IS 1
Collector Current-Max (IC) 0.5 A 0.5 A
Collector-Base Capacitance-Max 8 pF 8 pF
Collector-Emitter Voltage-Max 50 V 50 V
Configuration SINGLE WITH BUILT-IN RESISTOR SINGLE WITH BUILT-IN RESISTOR
DC Current Gain-Min (hFE) 56 56
JESD-30 Code R-PDSO-G3 R-PDSO-G3
Number of Elements 1 1
Number of Terminals 3 3
Operating Temperature-Max 150 °C 150 °C
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style SMALL OUTLINE SMALL OUTLINE
Polarity/Channel Type NPN NPN
Qualification Status Not Qualified Not Qualified
Surface Mount YES YES
Terminal Form GULL WING GULL WING
Terminal Position DUAL DUAL
Transistor Application SWITCHING SWITCHING
Transistor Element Material SILICON SILICON
Transition Frequency-Nom (fT) 100 MHz 100 MHz
VCEsat-Max 0.3 V 0.3 V
Base Number Matches 3 1

Compare PDTD114ET with alternatives

Compare PDTD114ET-T with alternatives