PHB20N06T,118 vs BUZ101SL feature comparison

PHB20N06T,118 NXP Semiconductors

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BUZ101SL Infineon Technologies AG

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Rohs Code Yes No
Part Life Cycle Code Transferred Obsolete
Ihs Manufacturer NXP SEMICONDUCTORS INFINEON TECHNOLOGIES AG
Part Package Code D2PAK TO-220AB
Package Description PLASTIC, D2PAK-3 FLANGE MOUNT, R-PSFM-T3
Pin Count 3 3
Manufacturer Package Code SOT404
Reach Compliance Code not_compliant not_compliant
ECCN Code EAR99 EAR99
HTS Code 8541.29.00.75
Factory Lead Time 4 Weeks 4 Weeks
Avalanche Energy Rating (Eas) 30.3 mJ 90 mJ
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 55 V 55 V
Drain Current-Max (ID) 20.3 A 20 A
Drain-source On Resistance-Max 0.075 Ω 0.07 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
JESD-30 Code R-PSSO-G2 R-PSFM-T3
JESD-609 Code e3 e0
Moisture Sensitivity Level 1
Number of Elements 1 1
Number of Terminals 2 3
Operating Mode ENHANCEMENT MODE ENHANCEMENT MODE
Operating Temperature-Max 175 °C 175 °C
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style SMALL OUTLINE FLANGE MOUNT
Peak Reflow Temperature (Cel) 245
Polarity/Channel Type N-CHANNEL N-CHANNEL
Power Dissipation-Max (Abs) 62 W 55 W
Pulsed Drain Current-Max (IDM) 81 A 80 A
Qualification Status Not Qualified Not Qualified
Surface Mount YES NO
Terminal Finish TIN Tin/Lead (Sn/Pb)
Terminal Form GULL WING THROUGH-HOLE
Terminal Position SINGLE SINGLE
Time@Peak Reflow Temperature-Max (s) 30
Transistor Application SWITCHING SWITCHING
Transistor Element Material SILICON SILICON
Base Number Matches 2 3
Additional Feature LOGIC LEVEL COMPATIBLE, AVALANCHE RATED
JEDEC-95 Code TO-220AB

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