PHB21N06LT-T
vs
NTD18N06L-1G
feature comparison
| Part Life Cycle Code |
Transferred
|
Active
|
| Ihs Manufacturer |
NXP SEMICONDUCTORS
|
ROCHESTER ELECTRONICS LLC
|
| Package Description |
SMALL OUTLINE, R-PSSO-G2
|
LEAD FREE, CASE 369D-01, DPAK-3
|
| Reach Compliance Code |
unknown
|
unknown
|
| ECCN Code |
EAR99
|
|
| Additional Feature |
LOGIC LEVEL COMPATIBLE
|
LOGIC LEVEL COMPATIBLE
|
| Avalanche Energy Rating (Eas) |
34 mJ
|
72 mJ
|
| Case Connection |
DRAIN
|
DRAIN
|
| Configuration |
SINGLE WITH BUILT-IN DIODE
|
SINGLE WITH BUILT-IN DIODE
|
| DS Breakdown Voltage-Min |
55 V
|
60 V
|
| Drain Current-Max (ID) |
19 A
|
18 A
|
| Drain-source On Resistance-Max |
0.075 Ω
|
0.065 Ω
|
| FET Technology |
METAL-OXIDE SEMICONDUCTOR
|
METAL-OXIDE SEMICONDUCTOR
|
| JESD-30 Code |
R-PSSO-G2
|
R-PSIP-T3
|
| Number of Elements |
1
|
1
|
| Number of Terminals |
2
|
3
|
| Operating Mode |
ENHANCEMENT MODE
|
ENHANCEMENT MODE
|
| Operating Temperature-Max |
175 °C
|
|
| Package Body Material |
PLASTIC/EPOXY
|
PLASTIC/EPOXY
|
| Package Shape |
RECTANGULAR
|
RECTANGULAR
|
| Package Style |
SMALL OUTLINE
|
IN-LINE
|
| Polarity/Channel Type |
N-CHANNEL
|
N-CHANNEL
|
| Pulsed Drain Current-Max (IDM) |
76 A
|
54 A
|
| Qualification Status |
Not Qualified
|
COMMERCIAL
|
| Surface Mount |
YES
|
NO
|
| Terminal Form |
GULL WING
|
THROUGH-HOLE
|
| Terminal Position |
SINGLE
|
SINGLE
|
| Transistor Application |
SWITCHING
|
SWITCHING
|
| Transistor Element Material |
SILICON
|
SILICON
|
| Base Number Matches |
2
|
2
|
| Pbfree Code |
|
Yes
|
| Rohs Code |
|
Yes
|
| Pin Count |
|
3
|
| Manufacturer Package Code |
|
CASE 369D-01
|
| JESD-609 Code |
|
e3
|
| Moisture Sensitivity Level |
|
NOT SPECIFIED
|
| Peak Reflow Temperature (Cel) |
|
NOT SPECIFIED
|
| Terminal Finish |
|
MATTE TIN
|
| Time@Peak Reflow Temperature-Max (s) |
|
NOT SPECIFIED
|
|
|
|
Compare PHB21N06LT-T with alternatives
Compare NTD18N06L-1G with alternatives