PHD20N06T,118 vs HUF75309D3 feature comparison

PHD20N06T,118 Nexperia

Buy Now Datasheet

HUF75309D3 Harris Semiconductor

Buy Now Datasheet
Rohs Code Yes No
Part Life Cycle Code Obsolete Obsolete
Ihs Manufacturer NEXPERIA HARRIS SEMICONDUCTOR
Part Package Code DPAK
Package Description PLASTIC, SC-63, DPAK-3
Pin Count 3
Manufacturer Package Code SOT428
Reach Compliance Code not_compliant unknown
ECCN Code EAR99 EAR99
Samacsys Manufacturer Nexperia
Avalanche Energy Rating (Eas) 36 mJ
Case Connection DRAIN DRAIN
Configuration SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 55 V 55 V
Drain Current-Max (ID) 18 A 17 A
Drain-source On Resistance-Max 0.077 Ω 0.07 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-252 TO-251AA
JESD-30 Code R-PSSO-G2 R-PSIP-T3
JESD-609 Code e3 e0
Moisture Sensitivity Level 1
Number of Elements 1 1
Number of Terminals 2 3
Operating Mode ENHANCEMENT MODE ENHANCEMENT MODE
Operating Temperature-Max 175 °C 175 °C
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style SMALL OUTLINE IN-LINE
Peak Reflow Temperature (Cel) 260
Polarity/Channel Type N-CHANNEL N-CHANNEL
Pulsed Drain Current-Max (IDM) 73 A
Qualification Status Not Qualified Not Qualified
Surface Mount YES NO
Terminal Finish TIN Tin/Lead (Sn/Pb)
Terminal Form GULL WING THROUGH-HOLE
Terminal Position SINGLE SINGLE
Time@Peak Reflow Temperature-Max (s) 30
Transistor Application SWITCHING SWITCHING
Transistor Element Material SILICON SILICON
Base Number Matches 2 4
HTS Code 8541.29.00.95
Power Dissipation Ambient-Max 45 W
Power Dissipation-Max (Abs) 45 W
Turn-off Time-Max (toff) 80 ns
Turn-on Time-Max (ton) 70 ns

Compare PHD20N06T,118 with alternatives

Compare HUF75309D3 with alternatives