PHD21N06LT
vs
BUZ71L
feature comparison
| Rohs Code |
Yes
|
No
|
| Part Life Cycle Code |
Obsolete
|
Obsolete
|
| Ihs Manufacturer |
NEXPERIA
|
MOTOROLA SEMICONDUCTOR PRODUCTS
|
| Package Description |
DPAK-3
|
,
|
| Reach Compliance Code |
compliant
|
unknown
|
| ECCN Code |
EAR99
|
|
| Date Of Intro |
2017-02-01
|
|
| Additional Feature |
LOGIC LEVEL COMPATIBLE
|
|
| Avalanche Energy Rating (Eas) |
34 mJ
|
|
| Case Connection |
DRAIN
|
|
| Configuration |
SINGLE WITH BUILT-IN DIODE
|
Single
|
| DS Breakdown Voltage-Min |
55 V
|
|
| Drain Current-Max (ID) |
19 A
|
|
| Drain-source On Resistance-Max |
0.075 Ω
|
|
| FET Technology |
METAL-OXIDE SEMICONDUCTOR
|
METAL-OXIDE SEMICONDUCTOR
|
| JESD-30 Code |
R-PSSO-G2
|
|
| JESD-609 Code |
e3
|
|
| Moisture Sensitivity Level |
1
|
|
| Number of Elements |
1
|
|
| Number of Terminals |
2
|
|
| Operating Mode |
ENHANCEMENT MODE
|
ENHANCEMENT MODE
|
| Package Body Material |
PLASTIC/EPOXY
|
|
| Package Shape |
RECTANGULAR
|
|
| Package Style |
SMALL OUTLINE
|
|
| Polarity/Channel Type |
N-CHANNEL
|
N-CHANNEL
|
| Pulsed Drain Current-Max (IDM) |
76 A
|
|
| Surface Mount |
YES
|
NO
|
| Terminal Finish |
TIN
|
|
| Terminal Form |
GULL WING
|
|
| Terminal Position |
SINGLE
|
|
| Transistor Application |
SWITCHING
|
|
| Transistor Element Material |
SILICON
|
|
| Base Number Matches |
3
|
6
|
| Drain Current-Max (Abs) (ID) |
|
14 A
|
| Operating Temperature-Max |
|
150 °C
|
| Power Dissipation-Max (Abs) |
|
40 W
|
|
|
|
Compare PHD21N06LT with alternatives