PHD21N06LT
vs
MTD20N06VT4
feature comparison
| Rohs Code |
Yes
|
|
| Part Life Cycle Code |
Obsolete
|
Transferred
|
| Ihs Manufacturer |
NEXPERIA
|
MOTOROLA INC
|
| Package Description |
DPAK-3
|
SMALL OUTLINE, R-PSSO-G2
|
| Reach Compliance Code |
compliant
|
unknown
|
| ECCN Code |
EAR99
|
EAR99
|
| Date Of Intro |
2017-02-01
|
|
| Additional Feature |
LOGIC LEVEL COMPATIBLE
|
AVALANCHE RATED
|
| Avalanche Energy Rating (Eas) |
34 mJ
|
200 mJ
|
| Case Connection |
DRAIN
|
DRAIN
|
| Configuration |
SINGLE WITH BUILT-IN DIODE
|
SINGLE WITH BUILT-IN DIODE
|
| DS Breakdown Voltage-Min |
55 V
|
60 V
|
| Drain Current-Max (ID) |
19 A
|
20 A
|
| Drain-source On Resistance-Max |
0.075 Ω
|
0.085 Ω
|
| FET Technology |
METAL-OXIDE SEMICONDUCTOR
|
METAL-OXIDE SEMICONDUCTOR
|
| JESD-30 Code |
R-PSSO-G2
|
R-PSSO-G2
|
| JESD-609 Code |
e3
|
|
| Moisture Sensitivity Level |
1
|
|
| Number of Elements |
1
|
1
|
| Number of Terminals |
2
|
2
|
| Operating Mode |
ENHANCEMENT MODE
|
ENHANCEMENT MODE
|
| Package Body Material |
PLASTIC/EPOXY
|
PLASTIC/EPOXY
|
| Package Shape |
RECTANGULAR
|
RECTANGULAR
|
| Package Style |
SMALL OUTLINE
|
SMALL OUTLINE
|
| Polarity/Channel Type |
N-CHANNEL
|
N-CHANNEL
|
| Pulsed Drain Current-Max (IDM) |
76 A
|
70 A
|
| Surface Mount |
YES
|
YES
|
| Terminal Finish |
TIN
|
|
| Terminal Form |
GULL WING
|
GULL WING
|
| Terminal Position |
SINGLE
|
SINGLE
|
| Transistor Application |
SWITCHING
|
SWITCHING
|
| Transistor Element Material |
SILICON
|
SILICON
|
| Base Number Matches |
3
|
3
|
| HTS Code |
|
8541.29.00.95
|
| Feedback Cap-Max (Crss) |
|
80 pF
|
| Operating Temperature-Max |
|
175 °C
|
| Power Dissipation Ambient-Max |
|
60 W
|
| Qualification Status |
|
Not Qualified
|
| Turn-off Time-Max (toff) |
|
140 ns
|
| Turn-on Time-Max (ton) |
|
170 ns
|
|
|
|
Compare PHD21N06LT with alternatives