PHN210T
vs
HUF76113DK8T
feature comparison
Rohs Code |
Yes
|
No
|
Part Life Cycle Code |
Transferred
|
Transferred
|
Ihs Manufacturer |
PHILIPS SEMICONDUCTORS
|
INTERSIL CORP
|
Reach Compliance Code |
unknown
|
not_compliant
|
ECCN Code |
EAR99
|
EAR99
|
Drain Current-Max (ID) |
3.4 A
|
6 A
|
FET Technology |
METAL-OXIDE SEMICONDUCTOR
|
METAL-OXIDE SEMICONDUCTOR
|
JESD-609 Code |
e4
|
e0
|
Operating Mode |
ENHANCEMENT MODE
|
ENHANCEMENT MODE
|
Operating Temperature-Max |
150 °C
|
150 °C
|
Polarity/Channel Type |
N-CHANNEL
|
N-CHANNEL
|
Power Dissipation-Max (Abs) |
1.3 W
|
2.5 W
|
Surface Mount |
YES
|
YES
|
Terminal Finish |
Nickel/Palladium/Gold (Ni/Pd/Au)
|
Tin/Lead (Sn/Pb)
|
Base Number Matches |
3
|
4
|
Part Package Code |
|
SOIC
|
Package Description |
|
PLASTIC, SO-8
|
Pin Count |
|
8
|
Configuration |
|
SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
|
DS Breakdown Voltage-Min |
|
30 V
|
Drain-source On Resistance-Max |
|
0.041 Ω
|
JEDEC-95 Code |
|
MS-012AA
|
JESD-30 Code |
|
R-PDSO-G8
|
Number of Elements |
|
2
|
Number of Terminals |
|
8
|
Package Body Material |
|
PLASTIC/EPOXY
|
Package Shape |
|
RECTANGULAR
|
Package Style |
|
SMALL OUTLINE
|
Qualification Status |
|
Not Qualified
|
Terminal Form |
|
GULL WING
|
Terminal Position |
|
DUAL
|
Transistor Application |
|
SWITCHING
|
Transistor Element Material |
|
SILICON
|
|
|
|
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