PHT6N06T/T3
vs
PHT6N06LT/T3
feature comparison
Part Life Cycle Code |
Transferred
|
Transferred
|
Ihs Manufacturer |
NXP SEMICONDUCTORS
|
NXP SEMICONDUCTORS
|
Part Package Code |
SC-73
|
|
Package Description |
SMALL OUTLINE, R-PDSO-G4
|
SMALL OUTLINE, R-PDSO-G4
|
Pin Count |
4
|
|
Reach Compliance Code |
unknown
|
unknown
|
ECCN Code |
EAR99
|
EAR99
|
Additional Feature |
ESD PROTECTED
|
|
Avalanche Energy Rating (Eas) |
15 mJ
|
15 mJ
|
Case Connection |
DRAIN
|
DRAIN
|
Configuration |
SINGLE WITH BUILT-IN DIODE
|
SINGLE WITH BUILT-IN DIODE
|
DS Breakdown Voltage-Min |
55 V
|
55 V
|
Drain Current-Max (ID) |
5.5 A
|
2.5 A
|
Drain-source On Resistance-Max |
0.15 Ω
|
0.15 Ω
|
FET Technology |
METAL-OXIDE SEMICONDUCTOR
|
METAL-OXIDE SEMICONDUCTOR
|
JESD-30 Code |
R-PDSO-G4
|
R-PDSO-G4
|
Number of Elements |
1
|
1
|
Number of Terminals |
4
|
4
|
Operating Mode |
ENHANCEMENT MODE
|
ENHANCEMENT MODE
|
Package Body Material |
PLASTIC/EPOXY
|
PLASTIC/EPOXY
|
Package Shape |
RECTANGULAR
|
RECTANGULAR
|
Package Style |
SMALL OUTLINE
|
SMALL OUTLINE
|
Polarity/Channel Type |
N-CHANNEL
|
N-CHANNEL
|
Pulsed Drain Current-Max (IDM) |
22 A
|
10 A
|
Qualification Status |
Not Qualified
|
Not Qualified
|
Surface Mount |
YES
|
YES
|
Terminal Form |
GULL WING
|
GULL WING
|
Terminal Position |
DUAL
|
DUAL
|
Transistor Application |
SWITCHING
|
SWITCHING
|
Transistor Element Material |
SILICON
|
SILICON
|
Base Number Matches |
2
|
2
|
HTS Code |
|
8541.29.00.95
|
Feedback Cap-Max (Crss) |
|
50 pF
|
Operating Temperature-Max |
|
150 °C
|
Power Dissipation Ambient-Max |
|
8.3 W
|
Turn-off Time-Max (toff) |
|
76 ns
|
Turn-on Time-Max (ton) |
|
77 ns
|
|
|
|
Compare PHT6N06T/T3 with alternatives
Compare PHT6N06LT/T3 with alternatives