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PHT6N06T/T3 vs PHT6N06T,135 feature comparison

PHT6N06T/T3 NXP Semiconductors

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PHT6N06T,135 NXP Semiconductors

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Part Life Cycle Code Transferred Transferred
Ihs Manufacturer NXP SEMICONDUCTORS NXP SEMICONDUCTORS
Part Package Code SC-73 SC-73
Package Description SMALL OUTLINE, R-PDSO-G4 PLASTIC, SC-73, 4 PIN
Pin Count 4 4
Reach Compliance Code unknown unknown
ECCN Code EAR99 EAR99
Additional Feature ESD PROTECTED ESD PROTECTED
Avalanche Energy Rating (Eas) 15 mJ 15 mJ
Case Connection DRAIN DRAIN
Configuration SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 55 V 55 V
Drain Current-Max (ID) 5.5 A 5.5 A
Drain-source On Resistance-Max 0.15 Ω 0.15 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
JESD-30 Code R-PDSO-G4 R-PDSO-G4
Number of Elements 1 1
Number of Terminals 4 4
Operating Mode ENHANCEMENT MODE ENHANCEMENT MODE
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style SMALL OUTLINE SMALL OUTLINE
Polarity/Channel Type N-CHANNEL N-CHANNEL
Pulsed Drain Current-Max (IDM) 22 A 22 A
Qualification Status Not Qualified Not Qualified
Surface Mount YES YES
Terminal Form GULL WING GULL WING
Terminal Position DUAL DUAL
Transistor Application SWITCHING SWITCHING
Transistor Element Material SILICON SILICON
Base Number Matches 2 2
Rohs Code Yes
Manufacturer Package Code SOT223
HTS Code 8541.29.00.75
Factory Lead Time 4 Weeks
JESD-609 Code e3
Moisture Sensitivity Level 1
Operating Temperature-Max 150 °C
Peak Reflow Temperature (Cel) 260
Power Dissipation-Max (Abs) 1.8 W
Terminal Finish TIN
Time@Peak Reflow Temperature-Max (s) 30
Transistors » Power Field-Effect Transistors
Transistors » Power Field-Effect Transistors

Compare PHT6N06T/T3 with alternatives

Compare PHT6N06T,135 with alternatives