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PHT6N06T vs BUK98150-55,135 feature comparison

PHT6N06T Nexperia

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BUK98150-55,135 NXP Semiconductors

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Rohs Code Yes Yes
Part Life Cycle Code Obsolete Obsolete
Ihs Manufacturer NEXPERIA NXP SEMICONDUCTORS
Package Description SMALL OUTLINE, R-PDSO-G4
Reach Compliance Code compliant compliant
ECCN Code EAR99 EAR99
Factory Lead Time 4 Weeks
Date Of Intro 2017-02-01
Samacsys Manufacturer Nexperia NXP
Additional Feature ESD PROTECTED LOGIC LEVEL COMPATIBLE, ESD PROTECTED
Avalanche Energy Rating (Eas) 15 mJ 15 mJ
Case Connection DRAIN DRAIN
Configuration SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 55 V 55 V
Drain Current-Max (ID) 5.5 A 2.6 A
Drain-source On Resistance-Max 0.15 Ω 0.15 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
JESD-30 Code R-PDSO-G4 R-PDSO-G4
JESD-609 Code e3 e3
Moisture Sensitivity Level 1 1
Number of Elements 1 1
Number of Terminals 4 4
Operating Mode ENHANCEMENT MODE ENHANCEMENT MODE
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style SMALL OUTLINE SMALL OUTLINE
Peak Reflow Temperature (Cel) 260 260
Polarity/Channel Type N-CHANNEL N-CHANNEL
Pulsed Drain Current-Max (IDM) 22 A 30 A
Surface Mount YES YES
Terminal Finish TIN TIN
Terminal Form GULL WING GULL WING
Terminal Position DUAL DUAL
Time@Peak Reflow Temperature-Max (s) 30 30
Transistor Application SWITCHING SWITCHING
Transistor Element Material SILICON SILICON
Base Number Matches 5 1
Pbfree Code Yes
HTS Code 8541.29.00.75
Operating Temperature-Max 150 °C
Power Dissipation-Max (Abs) 1.8 W
Qualification Status Not Qualified
Transistors » Power Field-Effect Transistors
Transistors » Power Field-Effect Transistors

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