PHT6N06T
vs
PHT6N06LT115
feature comparison
| Rohs Code |
Yes
|
|
| Part Life Cycle Code |
Obsolete
|
Obsolete
|
| Ihs Manufacturer |
NEXPERIA
|
NXP SEMICONDUCTORS
|
| Package Description |
SMALL OUTLINE, R-PDSO-G4
|
SMALL OUTLINE, R-PDSO-G4
|
| Reach Compliance Code |
compliant
|
unknown
|
| ECCN Code |
EAR99
|
EAR99
|
| Factory Lead Time |
4 Weeks
|
|
| Date Of Intro |
2017-02-01
|
|
| Samacsys Manufacturer |
Nexperia
|
|
| Additional Feature |
ESD PROTECTED
|
LOGIC LEVEL COMPATIBLE, ESD PROTECTION
|
| Avalanche Energy Rating (Eas) |
15 mJ
|
15 mJ
|
| Case Connection |
DRAIN
|
DRAIN
|
| Configuration |
SINGLE WITH BUILT-IN DIODE
|
SINGLE WITH BUILT-IN DIODE
|
| DS Breakdown Voltage-Min |
55 V
|
55 V
|
| Drain Current-Max (ID) |
5.5 A
|
2.5 A
|
| Drain-source On Resistance-Max |
0.15 Ω
|
0.15 Ω
|
| FET Technology |
METAL-OXIDE SEMICONDUCTOR
|
METAL-OXIDE SEMICONDUCTOR
|
| JESD-30 Code |
R-PDSO-G4
|
R-PDSO-G4
|
| JESD-609 Code |
e3
|
|
| Moisture Sensitivity Level |
1
|
|
| Number of Elements |
1
|
1
|
| Number of Terminals |
4
|
4
|
| Operating Mode |
ENHANCEMENT MODE
|
ENHANCEMENT MODE
|
| Package Body Material |
PLASTIC/EPOXY
|
PLASTIC/EPOXY
|
| Package Shape |
RECTANGULAR
|
RECTANGULAR
|
| Package Style |
SMALL OUTLINE
|
SMALL OUTLINE
|
| Peak Reflow Temperature (Cel) |
260
|
|
| Polarity/Channel Type |
N-CHANNEL
|
N-CHANNEL
|
| Pulsed Drain Current-Max (IDM) |
22 A
|
10 A
|
| Surface Mount |
YES
|
YES
|
| Terminal Finish |
TIN
|
|
| Terminal Form |
GULL WING
|
GULL WING
|
| Terminal Position |
DUAL
|
DUAL
|
| Time@Peak Reflow Temperature-Max (s) |
30
|
|
| Transistor Application |
SWITCHING
|
SWITCHING
|
| Transistor Element Material |
SILICON
|
SILICON
|
| Base Number Matches |
5
|
1
|
| Qualification Status |
|
Not Qualified
|
|
|
|
Compare PHT6N06T with alternatives
Compare PHT6N06LT115 with alternatives