PJQ2888_S1_00001
vs
QS6J1TR
feature comparison
| Part Life Cycle Code |
Active
|
Active
|
| Ihs Manufacturer |
PAN JIT INTERNATIONAL INC
|
ROHM CO LTD
|
| Package Description |
SMALL OUTLINE, S-PDSO-N8
|
SMALL OUTLINE, R-PDSO-G6
|
| Reach Compliance Code |
compliant
|
compliant
|
| ECCN Code |
EAR99
|
EAR99
|
| Configuration |
SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
|
SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
|
| DS Breakdown Voltage-Min |
20 V
|
20 V
|
| Drain Current-Max (ID) |
1.5 A
|
1.5 A
|
| Drain-source On Resistance-Max |
0.325 Ω
|
0.235 Ω
|
| FET Technology |
METAL-OXIDE SEMICONDUCTOR
|
METAL-OXIDE SEMICONDUCTOR
|
| JESD-30 Code |
S-PDSO-N8
|
R-PDSO-G6
|
| Number of Elements |
2
|
2
|
| Number of Terminals |
8
|
6
|
| Operating Mode |
ENHANCEMENT MODE
|
ENHANCEMENT MODE
|
| Operating Temperature-Max |
150 °C
|
150 °C
|
| Operating Temperature-Min |
-55 °C
|
|
| Package Body Material |
PLASTIC/EPOXY
|
PLASTIC/EPOXY
|
| Package Shape |
SQUARE
|
RECTANGULAR
|
| Package Style |
SMALL OUTLINE
|
SMALL OUTLINE
|
| Polarity/Channel Type |
P-CHANNEL
|
P-CHANNEL
|
| Pulsed Drain Current-Max (IDM) |
6 A
|
6 A
|
| Surface Mount |
YES
|
YES
|
| Terminal Form |
NO LEAD
|
GULL WING
|
| Terminal Position |
DUAL
|
DUAL
|
| Transistor Application |
SWITCHING
|
SWITCHING
|
| Transistor Element Material |
SILICON
|
SILICON
|
| Base Number Matches |
1
|
1
|
| Pbfree Code |
|
Yes
|
| Rohs Code |
|
Yes
|
| Pin Count |
|
6
|
| Samacsys Manufacturer |
|
ROHM Semiconductor
|
| JESD-609 Code |
|
e1
|
| Moisture Sensitivity Level |
|
1
|
| Peak Reflow Temperature (Cel) |
|
260
|
| Power Dissipation-Max (Abs) |
|
1.25 W
|
| Qualification Status |
|
Not Qualified
|
| Terminal Finish |
|
Tin/Silver/Copper (Sn/Ag/Cu)
|
| Time@Peak Reflow Temperature-Max (s) |
|
10
|
|
|
|
Compare PJQ2888_S1_00001 with alternatives
Compare QS6J1TR with alternatives