PMBT5551,235 vs MMBT5551L99Z feature comparison

PMBT5551,235 Nexperia

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MMBT5551L99Z Fairchild Semiconductor Corporation

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Part Life Cycle Code Active Obsolete
Ihs Manufacturer NEXPERIA FAIRCHILD SEMICONDUCTOR CORP
Part Package Code TO-236
Package Description SMALL OUTLINE, R-PDSO-G3 SMALL OUTLINE, R-PDSO-G3
Pin Count 3
Manufacturer Package Code SOT23
Reach Compliance Code compliant unknown
ECCN Code EAR99 EAR99
Date Of Intro 1993-03-01
Samacsys Manufacturer Nexperia
Collector Current-Max (IC) 0.3 A 0.2 A
Collector-Base Capacitance-Max 6 pF
Collector-Emitter Voltage-Max 160 V 160 V
Configuration SINGLE SINGLE
DC Current Gain-Min (hFE) 30 30
JESD-30 Code R-PDSO-G3 R-PDSO-G3
JESD-609 Code e3
Moisture Sensitivity Level 1
Number of Elements 1 1
Number of Terminals 3 3
Operating Temperature-Max 150 °C 150 °C
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style SMALL OUTLINE SMALL OUTLINE
Peak Reflow Temperature (Cel) 260
Polarity/Channel Type NPN NPN
Qualification Status Not Qualified Not Qualified
Surface Mount YES YES
Terminal Finish TIN
Terminal Form GULL WING GULL WING
Terminal Position DUAL DUAL
Time@Peak Reflow Temperature-Max (s) 30
Transistor Element Material SILICON SILICON
Transition Frequency-Nom (fT) 100 MHz 100 MHz
VCEsat-Max 0.2 V
Base Number Matches 2 1
Transistor Application AMPLIFIER

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