PMV117EN vs BSS119E-6327 feature comparison

PMV117EN Nexperia

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BSS119E-6327 Infineon Technologies AG

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Rohs Code Yes No
Part Life Cycle Code Active Obsolete
Ihs Manufacturer NEXPERIA INFINEON TECHNOLOGIES AG
Package Description PLASTIC PACKAGE-3 SMALL OUTLINE, R-PDSO-G3
Reach Compliance Code compliant unknown
ECCN Code EAR99
Date Of Intro 2017-02-01
Configuration SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 30 V 100 V
Drain Current-Max (ID) 2.5 A 0.17 A
Drain-source On Resistance-Max 0.19 Ω 6 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-236AB
JESD-30 Code R-PDSO-G3 R-PDSO-G3
JESD-609 Code e3
Moisture Sensitivity Level 1 1
Number of Elements 1 1
Number of Terminals 3 3
Operating Mode ENHANCEMENT MODE ENHANCEMENT MODE
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style SMALL OUTLINE SMALL OUTLINE
Peak Reflow Temperature (Cel) 260
Polarity/Channel Type N-CHANNEL N-CHANNEL
Surface Mount YES YES
Terminal Finish TIN MATTE TIN
Terminal Form GULL WING GULL WING
Terminal Position DUAL DUAL
Time@Peak Reflow Temperature-Max (s) 30
Transistor Application SWITCHING
Transistor Element Material SILICON SILICON
Base Number Matches 3 2
Part Package Code SOT-23
Pin Count 3
Drain Current-Max (Abs) (ID) 0.17 A
Operating Temperature-Max 150 °C
Power Dissipation-Max (Abs) 0.36 W
Qualification Status Not Qualified

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