PUMH16/T1 vs RN1902(TE85R) feature comparison

PUMH16/T1 NXP Semiconductors

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RN1902(TE85R) Toshiba America Electronic Components

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Pbfree Code Yes
Rohs Code Yes
Part Life Cycle Code Obsolete Obsolete
Ihs Manufacturer NXP SEMICONDUCTORS TOSHIBA CORP
Part Package Code SC-88
Package Description SMALL OUTLINE, R-PDSO-G6 SMALL OUTLINE, R-PDSO-G6
Pin Count 6 6
Reach Compliance Code unknown unknown
ECCN Code EAR99 EAR99
Additional Feature BUILT IN BIAS RESISTOR RATIO 2.1 BUILT-IN BIAS RESISTOR RATIO IS 1
Collector Current-Max (IC) 0.1 A 0.1 A
Collector-Emitter Voltage-Max 50 V 50 V
Configuration SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR
DC Current Gain-Min (hFE) 80 50
JESD-30 Code R-PDSO-G6 R-PDSO-G6
JESD-609 Code e3
Number of Elements 2 2
Number of Terminals 6 6
Operating Temperature-Max 150 °C
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style SMALL OUTLINE SMALL OUTLINE
Peak Reflow Temperature (Cel) NOT SPECIFIED
Polarity/Channel Type NPN NPN
Qualification Status Not Qualified Not Qualified
Surface Mount YES YES
Terminal Finish Tin (Sn)
Terminal Form GULL WING GULL WING
Terminal Position DUAL DUAL
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Transistor Application SWITCHING SWITCHING
Transistor Element Material SILICON SILICON
Base Number Matches 1 2
Transition Frequency-Nom (fT) 250 MHz

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