QM3006D
vs
BSC043N03MSCGATMA1
feature comparison
Rohs Code |
Yes
|
|
Part Life Cycle Code |
Contact Manufacturer
|
Obsolete
|
Ihs Manufacturer |
UPI SEMICONDUCTOR CORP
|
INFINEON TECHNOLOGIES AG
|
Reach Compliance Code |
unknown
|
compliant
|
ECCN Code |
EAR99
|
EAR99
|
Avalanche Energy Rating (Eas) |
252 mJ
|
35 mJ
|
Case Connection |
DRAIN
|
DRAIN
|
Configuration |
SINGLE WITH BUILT-IN DIODE
|
SINGLE WITH BUILT-IN DIODE
|
DS Breakdown Voltage-Min |
30 V
|
30 V
|
Drain Current-Max (ID) |
17 A
|
17 A
|
Drain-source On Resistance-Max |
0.0055 Ω
|
0.0056 Ω
|
FET Technology |
METAL-OXIDE SEMICONDUCTOR
|
METAL-OXIDE SEMICONDUCTOR
|
JEDEC-95 Code |
TO-252
|
|
JESD-30 Code |
R-PSSO-G2
|
R-PDSO-F8
|
Number of Elements |
1
|
1
|
Number of Terminals |
2
|
8
|
Operating Mode |
ENHANCEMENT MODE
|
ENHANCEMENT MODE
|
Operating Temperature-Min |
-55 °C
|
|
Package Body Material |
PLASTIC/EPOXY
|
PLASTIC/EPOXY
|
Package Shape |
RECTANGULAR
|
RECTANGULAR
|
Package Style |
SMALL OUTLINE
|
SMALL OUTLINE
|
Peak Reflow Temperature (Cel) |
NOT SPECIFIED
|
|
Polarity/Channel Type |
N-CHANNEL
|
N-CHANNEL
|
Pulsed Drain Current-Max (IDM) |
160 A
|
348 A
|
Surface Mount |
YES
|
YES
|
Terminal Form |
GULL WING
|
FLAT
|
Terminal Position |
SINGLE
|
DUAL
|
Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED
|
|
Transistor Application |
SWITCHING
|
SWITCHING
|
Transistor Element Material |
SILICON
|
SILICON
|
Base Number Matches |
1
|
1
|
Package Description |
|
SMALL OUTLINE, R-PDSO-F8
|
|
|
|
Compare QM3006D with alternatives
Compare BSC043N03MSCGATMA1 with alternatives