QM3006D
vs
RQ3E180AJTB
feature comparison
| Rohs Code |
Yes
|
Yes
|
| Part Life Cycle Code |
Contact Manufacturer
|
Active
|
| Ihs Manufacturer |
UPI SEMICONDUCTOR CORP
|
ROHM CO LTD
|
| Reach Compliance Code |
unknown
|
compliant
|
| ECCN Code |
EAR99
|
EAR99
|
| Avalanche Energy Rating (Eas) |
252 mJ
|
24.6 mJ
|
| Case Connection |
DRAIN
|
DRAIN
|
| Configuration |
SINGLE WITH BUILT-IN DIODE
|
SINGLE WITH BUILT-IN DIODE
|
| DS Breakdown Voltage-Min |
30 V
|
30 V
|
| Drain Current-Max (ID) |
17 A
|
18 A
|
| Drain-source On Resistance-Max |
0.0055 Ω
|
0.0058 Ω
|
| FET Technology |
METAL-OXIDE SEMICONDUCTOR
|
METAL-OXIDE SEMICONDUCTOR
|
| JEDEC-95 Code |
TO-252
|
|
| JESD-30 Code |
R-PSSO-G2
|
R-PDSO-F5
|
| Number of Elements |
1
|
1
|
| Number of Terminals |
2
|
5
|
| Operating Mode |
ENHANCEMENT MODE
|
ENHANCEMENT MODE
|
| Operating Temperature-Min |
-55 °C
|
|
| Package Body Material |
PLASTIC/EPOXY
|
PLASTIC/EPOXY
|
| Package Shape |
RECTANGULAR
|
RECTANGULAR
|
| Package Style |
SMALL OUTLINE
|
SMALL OUTLINE
|
| Peak Reflow Temperature (Cel) |
NOT SPECIFIED
|
260
|
| Polarity/Channel Type |
N-CHANNEL
|
N-CHANNEL
|
| Pulsed Drain Current-Max (IDM) |
160 A
|
72 A
|
| Surface Mount |
YES
|
YES
|
| Terminal Form |
GULL WING
|
FLAT
|
| Terminal Position |
SINGLE
|
DUAL
|
| Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED
|
10
|
| Transistor Application |
SWITCHING
|
SWITCHING
|
| Transistor Element Material |
SILICON
|
SILICON
|
| Base Number Matches |
1
|
2
|
| Package Description |
|
HSMT8, 8 PIN
|
| Samacsys Manufacturer |
|
ROHM Semiconductor
|
| Moisture Sensitivity Level |
|
1
|
|
|
|
Compare QM3006D with alternatives
Compare RQ3E180AJTB with alternatives