R6035ENZ1C9
vs
IPW60R099C6FKSA1
feature comparison
Rohs Code |
Yes
|
Yes
|
Part Life Cycle Code |
Obsolete
|
Not Recommended
|
Ihs Manufacturer |
ROHM CO LTD
|
INFINEON TECHNOLOGIES AG
|
Package Description |
FLANGE MOUNT, R-PSFM-T3
|
GREEN, PLASTIC PACKAGE-3
|
Reach Compliance Code |
compliant
|
compliant
|
ECCN Code |
EAR99
|
EAR99
|
Samacsys Manufacturer |
ROHM Semiconductor
|
Infineon
|
Avalanche Energy Rating (Eas) |
796 mJ
|
796 mJ
|
Configuration |
SINGLE WITH BUILT-IN DIODE
|
SINGLE WITH BUILT-IN DIODE
|
DS Breakdown Voltage-Min |
600 V
|
600 V
|
Drain Current-Max (ID) |
35 A
|
37.9 A
|
Drain-source On Resistance-Max |
0.102 Ω
|
0.099 Ω
|
FET Technology |
METAL-OXIDE SEMICONDUCTOR
|
METAL-OXIDE SEMICONDUCTOR
|
JEDEC-95 Code |
TO-247
|
TO-247
|
JESD-30 Code |
R-PSFM-T3
|
R-PSFM-T3
|
Moisture Sensitivity Level |
1
|
|
Number of Elements |
1
|
1
|
Number of Terminals |
3
|
3
|
Operating Mode |
ENHANCEMENT MODE
|
ENHANCEMENT MODE
|
Package Body Material |
PLASTIC/EPOXY
|
PLASTIC/EPOXY
|
Package Shape |
RECTANGULAR
|
RECTANGULAR
|
Package Style |
FLANGE MOUNT
|
FLANGE MOUNT
|
Peak Reflow Temperature (Cel) |
260
|
NOT SPECIFIED
|
Polarity/Channel Type |
N-CHANNEL
|
N-CHANNEL
|
Pulsed Drain Current-Max (IDM) |
105 A
|
112 A
|
Surface Mount |
NO
|
NO
|
Terminal Form |
THROUGH-HOLE
|
THROUGH-HOLE
|
Terminal Position |
SINGLE
|
SINGLE
|
Time@Peak Reflow Temperature-Max (s) |
10
|
NOT SPECIFIED
|
Transistor Application |
SWITCHING
|
SWITCHING
|
Transistor Element Material |
SILICON
|
SILICON
|
Base Number Matches |
1
|
1
|
Pbfree Code |
|
Yes
|
Part Package Code |
|
TO-247
|
Pin Count |
|
3
|
JESD-609 Code |
|
e3
|
Operating Temperature-Max |
|
150 °C
|
Qualification Status |
|
Not Qualified
|
Terminal Finish |
|
Tin (Sn)
|
|
|
|
Compare R6035ENZ1C9 with alternatives
Compare IPW60R099C6FKSA1 with alternatives