RF1K4908696 vs BSO305N feature comparison

RF1K4908696 Harris Semiconductor

Buy Now Datasheet

BSO305N Infineon Technologies AG

Buy Now Datasheet
Part Life Cycle Code Transferred Obsolete
Ihs Manufacturer HARRIS SEMICONDUCTOR INFINEON TECHNOLOGIES AG
Package Description SMALL OUTLINE, R-PDSO-G8
Reach Compliance Code unknown unknown
ECCN Code EAR99 EAR99
Additional Feature AVALANCHE RATED LOGIC LEVEL COMPATIBLE
Configuration SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 30 V 30 V
Drain Current-Max (ID) 3.5 A 6 A
Drain-source On Resistance-Max 0.132 Ω 0.035 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code MS-012AA
JESD-30 Code R-PDSO-G8 R-PDSO-G8
Number of Elements 2 2
Number of Terminals 8 8
Operating Mode ENHANCEMENT MODE ENHANCEMENT MODE
Operating Temperature-Max 150 °C 150 °C
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style SMALL OUTLINE SMALL OUTLINE
Polarity/Channel Type N-CHANNEL N-CHANNEL
Qualification Status Not Qualified Not Qualified
Surface Mount YES YES
Terminal Form GULL WING GULL WING
Terminal Position DUAL DUAL
Transistor Application SWITCHING SWITCHING
Transistor Element Material SILICON SILICON
Turn-off Time-Max (toff) 130 ns
Turn-on Time-Max (ton) 50 ns
Base Number Matches 3 1
Rohs Code No
Avalanche Energy Rating (Eas) 100 mJ
JESD-609 Code e0
Power Dissipation-Max (Abs) 2 W
Pulsed Drain Current-Max (IDM) 24 A
Terminal Finish Tin/Lead (Sn/Pb)

Compare BSO305N with alternatives