RF1K4908696 vs HUF76113DK8T feature comparison

RF1K4908696 Intersil Corporation

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HUF76113DK8T Intersil Corporation

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Part Life Cycle Code Transferred Transferred
Ihs Manufacturer INTERSIL CORP INTERSIL CORP
Package Description SMALL OUTLINE, R-PDSO-G8 PLASTIC, SO-8
Reach Compliance Code unknown not_compliant
ECCN Code EAR99 EAR99
Additional Feature AVALANCHE RATED
Configuration SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 30 V 30 V
Drain Current-Max (ID) 3.5 A 6 A
Drain-source On Resistance-Max 0.132 Ω 0.041 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code MS-012AA MS-012AA
JESD-30 Code R-PDSO-G8 R-PDSO-G8
Number of Elements 2 2
Number of Terminals 8 8
Operating Mode ENHANCEMENT MODE ENHANCEMENT MODE
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style SMALL OUTLINE SMALL OUTLINE
Polarity/Channel Type N-CHANNEL N-CHANNEL
Qualification Status Not Qualified Not Qualified
Surface Mount YES YES
Terminal Form GULL WING GULL WING
Terminal Position DUAL DUAL
Transistor Application SWITCHING SWITCHING
Transistor Element Material SILICON SILICON
Base Number Matches 3 4
Rohs Code No
Part Package Code SOIC
Pin Count 8
JESD-609 Code e0
Operating Temperature-Max 150 °C
Power Dissipation-Max (Abs) 2.5 W
Terminal Finish Tin/Lead (Sn/Pb)

Compare RF1K4908696 with alternatives

Compare HUF76113DK8T with alternatives