RF1K4909096 vs 934033430118 feature comparison

RF1K4909096 Harris Semiconductor

Buy Now Datasheet

934033430118 NXP Semiconductors

Buy Now Datasheet
Part Life Cycle Code Obsolete Obsolete
Ihs Manufacturer HARRIS SEMICONDUCTOR NXP SEMICONDUCTORS
Package Description SMALL OUTLINE, R-PDSO-G8 SMALL OUTLINE, R-PDSO-G8
Reach Compliance Code unknown unknown
ECCN Code EAR99 EAR99
Additional Feature AVALANCHE RATED, LOGIC LEVEL COMPATIBLE LOGIC LEVEL COMPATIBLE
Configuration SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 12 V 30 V
Drain Current-Max (ID) 3.5 A 3.4 A
Drain-source On Resistance-Max 0.05 Ω 0.1 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code MS-012AA MS-012AA
JESD-30 Code R-PDSO-G8 R-PDSO-G8
Number of Elements 2 2
Number of Terminals 8 8
Operating Mode ENHANCEMENT MODE ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style SMALL OUTLINE SMALL OUTLINE
Polarity/Channel Type N-CHANNEL N-CHANNEL
Qualification Status Not Qualified Not Qualified
Surface Mount YES YES
Terminal Form GULL WING GULL WING
Terminal Position DUAL DUAL
Transistor Application SWITCHING SWITCHING
Transistor Element Material SILICON SILICON
Turn-off Time-Max (toff) 140 ns
Turn-on Time-Max (ton) 100 ns
Base Number Matches 4 1
Pbfree Code Yes
Rohs Code Yes
Part Package Code SOIC
Pin Count 8
Avalanche Energy Rating (Eas) 13 mJ
Peak Reflow Temperature (Cel) NOT SPECIFIED
Pulsed Drain Current-Max (IDM) 14 A
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED

Compare RF1K4909096 with alternatives

Compare 934033430118 with alternatives