RF1S70N06SM9A vs RF1S70N06SM feature comparison

RF1S70N06SM9A Fairchild Semiconductor Corporation

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RF1S70N06SM Intersil Corporation

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Rohs Code No No
Part Life Cycle Code Obsolete Transferred
Ihs Manufacturer FAIRCHILD SEMICONDUCTOR CORP INTERSIL CORP
Part Package Code D2PAK D2PAK
Package Description TO-263AB, 3 PIN TO-263AB, 3 PIN
Pin Count 4 4
Reach Compliance Code unknown not_compliant
ECCN Code EAR99 EAR99
Case Connection DRAIN DRAIN
Configuration SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 60 V 60 V
Drain Current-Max (ID) 70 A 70 A
Drain-source On Resistance-Max 0.014 Ω 0.014 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-263AB TO-263AB
JESD-30 Code R-PSSO-G2 R-PSSO-G2
JESD-609 Code e0 e0
Number of Elements 1 1
Number of Terminals 2 2
Operating Mode ENHANCEMENT MODE ENHANCEMENT MODE
Operating Temperature-Max 175 °C 175 °C
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style SMALL OUTLINE SMALL OUTLINE
Polarity/Channel Type N-CHANNEL N-CHANNEL
Power Dissipation-Max (Abs) 150 W 150 W
Qualification Status Not Qualified Not Qualified
Surface Mount YES YES
Terminal Finish TIN LEAD TIN LEAD
Terminal Form GULL WING GULL WING
Terminal Position SINGLE SINGLE
Transistor Application SWITCHING SWITCHING
Transistor Element Material SILICON SILICON
Base Number Matches 1 2
HTS Code 8541.29.00.95
Additional Feature AVALANCHE RATED
Power Dissipation Ambient-Max 150 W
Turn-off Time-Max (toff) 125 ns
Turn-on Time-Max (ton) 125 ns