RFD12N06RLE vs RFD12N06RLE feature comparison

RFD12N06RLE Fairchild Semiconductor Corporation

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RFD12N06RLE Rochester Electronics LLC

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Rohs Code Yes No
Part Life Cycle Code Obsolete Active
Ihs Manufacturer FAIRCHILD SEMICONDUCTOR CORP ROCHESTER ELECTRONICS LLC
Reach Compliance Code not_compliant unknown
ECCN Code EAR99
Case Connection DRAIN DRAIN
Configuration SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 60 V 60 V
Drain Current-Max (ID) 18 A 18 A
Drain-source On Resistance-Max 0.063 Ω 0.063 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-251AA TO-251AA
JESD-30 Code R-PSIP-T3 R-PSIP-T3
JESD-609 Code e3 e0
Number of Elements 1 1
Number of Terminals 3 3
Operating Mode ENHANCEMENT MODE ENHANCEMENT MODE
Operating Temperature-Max 175 °C
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style IN-LINE IN-LINE
Polarity/Channel Type N-CHANNEL N-CHANNEL
Power Dissipation-Max (Abs) 49 W
Qualification Status Not Qualified COMMERCIAL
Surface Mount NO NO
Terminal Finish MATTE TIN TIN LEAD
Terminal Form THROUGH-HOLE THROUGH-HOLE
Terminal Position SINGLE SINGLE
Transistor Application SWITCHING SWITCHING
Transistor Element Material SILICON SILICON
Base Number Matches 6 3
Pbfree Code No
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED

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