RFD12N06RLE
vs
SPP10N10
feature comparison
Pbfree Code |
No
|
Yes
|
Rohs Code |
No
|
Yes
|
Part Life Cycle Code |
Active
|
Active
|
Ihs Manufacturer |
ROCHESTER ELECTRONICS LLC
|
ROCHESTER ELECTRONICS LLC
|
Reach Compliance Code |
unknown
|
unknown
|
Case Connection |
DRAIN
|
|
Configuration |
SINGLE WITH BUILT-IN DIODE
|
SINGLE WITH BUILT-IN DIODE
|
DS Breakdown Voltage-Min |
60 V
|
100 V
|
Drain Current-Max (ID) |
18 A
|
10.3 A
|
Drain-source On Resistance-Max |
0.063 Ω
|
0.17 Ω
|
FET Technology |
METAL-OXIDE SEMICONDUCTOR
|
METAL-OXIDE SEMICONDUCTOR
|
JEDEC-95 Code |
TO-251AA
|
TO-262AA
|
JESD-30 Code |
R-PSIP-T3
|
R-PSFM-T3
|
JESD-609 Code |
e0
|
e3
|
Number of Elements |
1
|
1
|
Number of Terminals |
3
|
3
|
Operating Mode |
ENHANCEMENT MODE
|
ENHANCEMENT MODE
|
Package Body Material |
PLASTIC/EPOXY
|
PLASTIC/EPOXY
|
Package Shape |
RECTANGULAR
|
RECTANGULAR
|
Package Style |
IN-LINE
|
FLANGE MOUNT
|
Peak Reflow Temperature (Cel) |
NOT SPECIFIED
|
NOT SPECIFIED
|
Polarity/Channel Type |
N-CHANNEL
|
N-CHANNEL
|
Qualification Status |
COMMERCIAL
|
COMMERCIAL
|
Surface Mount |
NO
|
NO
|
Terminal Finish |
TIN LEAD
|
MATTE TIN
|
Terminal Form |
THROUGH-HOLE
|
THROUGH-HOLE
|
Terminal Position |
SINGLE
|
SINGLE
|
Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED
|
NOT SPECIFIED
|
Transistor Application |
SWITCHING
|
|
Transistor Element Material |
SILICON
|
SILICON
|
Base Number Matches |
3
|
1
|
Part Package Code |
|
TO-262AA
|
Package Description |
|
ROHS COMPLIANT, TO-262, 3 PIN
|
Pin Count |
|
3
|
Additional Feature |
|
AVALANCHE RATED
|
Avalanche Energy Rating (Eas) |
|
60 mJ
|
Moisture Sensitivity Level |
|
NOT SPECIFIED
|
Pulsed Drain Current-Max (IDM) |
|
41.2 A
|
|
|
|
Compare RFD12N06RLE with alternatives
Compare SPP10N10 with alternatives