RFD16N06 vs IPP45N06S4L-08 feature comparison

RFD16N06 Harris Semiconductor

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IPP45N06S4L-08 Infineon Technologies AG

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Rohs Code No Yes
Part Life Cycle Code Obsolete Obsolete
Ihs Manufacturer HARRIS SEMICONDUCTOR INFINEON TECHNOLOGIES AG
Package Description IN-LINE, R-PSIP-T3 FLANGE MOUNT, R-PSFM-T3
Reach Compliance Code unknown not_compliant
ECCN Code EAR99 EAR99
HTS Code 8541.29.00.95
Additional Feature AVALANCHE RATED
Case Connection DRAIN DRAIN
Configuration SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 60 V 60 V
Drain Current-Max (ID) 16 A 45 A
Drain-source On Resistance-Max 0.047 Ω 0.0079 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-251AA TO-220AB
JESD-30 Code R-PSIP-T3 R-PSFM-T3
JESD-609 Code e0 e3
Number of Elements 1 1
Number of Terminals 3 3
Operating Mode ENHANCEMENT MODE ENHANCEMENT MODE
Operating Temperature-Max 175 °C 175 °C
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style IN-LINE FLANGE MOUNT
Polarity/Channel Type N-CHANNEL N-CHANNEL
Power Dissipation Ambient-Max 72 W
Power Dissipation-Max (Abs) 72 W 71 W
Qualification Status Not Qualified Not Qualified
Surface Mount NO NO
Terminal Finish TIN LEAD Tin (Sn)
Terminal Form THROUGH-HOLE THROUGH-HOLE
Terminal Position SINGLE SINGLE
Transistor Application SWITCHING
Transistor Element Material SILICON SILICON
Turn-off Time-Max (toff) 125 ns
Turn-on Time-Max (ton) 65 ns
Base Number Matches 2 1
Pbfree Code No
Part Package Code TO-220AB
Pin Count 3
Samacsys Manufacturer Infineon
Avalanche Energy Rating (Eas) 97 mJ
Moisture Sensitivity Level 1
Peak Reflow Temperature (Cel) NOT SPECIFIED
Pulsed Drain Current-Max (IDM) 180 A
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED

Compare RFD16N06 with alternatives

Compare IPP45N06S4L-08 with alternatives