RFD16N06SM9A
vs
SUB70N03-09P
feature comparison
Part Life Cycle Code |
Active
|
Transferred
|
Ihs Manufacturer |
ROCHESTER ELECTRONICS LLC
|
SILICONIX INC
|
Reach Compliance Code |
unknown
|
unknown
|
Additional Feature |
AVALANCHE RATED
|
|
Case Connection |
DRAIN
|
|
Configuration |
SINGLE WITH BUILT-IN DIODE
|
SINGLE
|
DS Breakdown Voltage-Min |
60 V
|
|
Drain Current-Max (ID) |
16 A
|
70 A
|
Drain-source On Resistance-Max |
0.047 Ω
|
|
FET Technology |
METAL-OXIDE SEMICONDUCTOR
|
METAL-OXIDE SEMICONDUCTOR
|
JEDEC-95 Code |
TO-252AA
|
|
JESD-30 Code |
R-PSSO-G2
|
|
Number of Elements |
1
|
1
|
Number of Terminals |
2
|
|
Operating Mode |
ENHANCEMENT MODE
|
ENHANCEMENT MODE
|
Package Body Material |
PLASTIC/EPOXY
|
|
Package Shape |
RECTANGULAR
|
|
Package Style |
SMALL OUTLINE
|
|
Polarity/Channel Type |
N-CHANNEL
|
N-CHANNEL
|
Qualification Status |
COMMERCIAL
|
|
Surface Mount |
YES
|
YES
|
Terminal Form |
GULL WING
|
|
Terminal Position |
SINGLE
|
|
Transistor Application |
SWITCHING
|
|
Transistor Element Material |
SILICON
|
|
Base Number Matches |
1
|
1
|
Rohs Code |
|
No
|
Part Package Code |
|
D2PAK
|
Package Description |
|
,
|
Pin Count |
|
4
|
ECCN Code |
|
EAR99
|
Samacsys Manufacturer |
|
Vishay
|
JESD-609 Code |
|
e0
|
Operating Temperature-Max |
|
175 °C
|
Power Dissipation-Max (Abs) |
|
93 W
|
Terminal Finish |
|
Tin/Lead (Sn/Pb)
|
|
|
|
Compare RFD16N06SM9A with alternatives
Compare SUB70N03-09P with alternatives